Low RDSon 20V N Channel MOSFET ASDsemi ASDM20N20KQ-R Suitable for Load Switching and PWM Applications
Key Attributes
Model Number:
ASDM20N20KQ-R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
20A
RDS(on):
42mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
515pF@15V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
ASDM20N20KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM20N20KQ is a 20V N-Channel MOSFET designed for high-performance applications. Featuring a super high dense cell design for extremely low RDS(on), it offers high power and current handling capability. This lead-free product is suitable for load switching, PWM applications, and power management.
Product Attributes
- Brand: Ascend Semiconductor
- Product Type: N-Channel MOSFET
- Lead Status: Lead-free
Technical Specifications
| Specification | Value |
|---|---|
| Model | ASDM20N20KQ |
| Voltage - Breakdown (BVDSS) | 20 V |
| RDS(on) Typ @ VGS=4.5V | 20 m |
| Current - Continuous Drain (ID) @ TC=25 | 20 A |
| Package / Case | TO-252-2L |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel |
| Quantity per Reel | 2500 |
| Marking | 20N20 |
2410121714_ASDsemi-ASDM20N20KQ-R_C2972895.pdf
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