N Channel MOSFET Bestirpower BMW60N026UC1 Featuring Low EMI and Reduced Switching Losses for Power Applications
Key Attributes
Model Number:
BMW60N026UC1
Product Custom Attributes
Drain To Source Voltage:
600V
Configuration:
-
Current - Continuous Drain(Id):
102A
RDS(on):
26mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@2mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.5pF
Number:
1 N-channel
Output Capacitance(Coss):
390pF
Input Capacitance(Ciss):
7.95nF
Pd - Power Dissipation:
625W
Gate Charge(Qg):
145nC@10V
Mfr. Part #:
BMW60N026UC1
Package:
TO-247-3
Product Description
Product Overview
The BMW60N026UC1 is a high-performance N-Channel Power MOSFET engineered with Bestirpowers advanced super junction technology. This MOSFET is designed to achieve exceptionally low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. It offers designers the advantage of Low EMI and reduced switching losses, making it suitable for demanding applications such as PC power supplies, server power supplies, telecommunications, solar inverters, and automotive superchargers.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Channel Type: N-Channel
- Package Type: TO-247-3
- Compliance: RoHS (implied by standard industry practice, not explicitly stated)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Parameters | ||||||
| BVDSS@ TJ,max | Drain to Source Voltage | 650 | V | |||
| ID | Drain Current (Continuous, TC = 25) | 102 | A | |||
| RDS(on),max | Static Drain to Source On Resistance | VGS = 10 V, ID =40 A, Tj=25C | 23 | 26 | m | |
| Qg,typ | Total Gate Charge | VDD = 480 V, ID = 50 A, VGS =0 to 10 V | 145 | nC | ||
| FOM Rdson*Qg | Figure of Merit | Extremely low | ||||
| Eoss | Stored Energy | Extremely low | ||||
| dv/dt | MOSFET dv/dt | 50 | V/ns | |||
| Peak Diode Recovery dv/dt | VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high side switch with identical RG | 50 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | VDD=50V, RG=25, Starting Tj=25C | 2025 | mJ | ||
| Model Number | BMW60N026UC1 | |||||
| Voltage Rating | 600 V | |||||
| On-Resistance | 26 m | |||||
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage(1) | 600 | V | |||
| VGSS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current Continuous (TC = 125) | 51 | A | |||
| IDM | Drain Current Pulsed | 350 | A | |||
| PD | Power Dissipation (TC = 25) | 625 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| Is | Continuous diode forward current | 102 | A | |||
| Is | Pulse Diode pulse current(2) | 300 | A | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.2 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62 | /W | |||
| Tsold | Soldering temperature, wavesoldering only allowed at leads | 260 | ||||
| Electrical Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 600 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V, Tj=25C | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| V(GS)th | Gate Threshold Voltage | VGS = VDS , ID = 2 mA | 3.0 | 4.5 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID =40 A, Tj=25C | 23 | 26 | m | |
| Ciss | Input Capacitance | VGS = 0 V,VDS = 50 V, f = 250 KHz | 7950 | pF | ||
| Coss | Output Capacitance | 390 | pF | |||
| Co(tr) | Time Related Output Capacitance(2) | VDS = 0 V to 400 V, VGS = 0 V | 1290 | pF | ||
| Co(er) | Energy Related Output Capacitance(1) | 258 | pF | |||
| Qg(tot) | Total Gate Charge | VDD = 480 V, ID = 50 A, VGS =0 to 10 V | 145 | nC | ||
| Qgs | Gate to Source Charge | 47 | nC | |||
| Qgd | Gate to Drain Miller Charge | 43 | nC | |||
| RG | Gate Resistance | VDD= 0 V, VGS = 0 V, F = 1 MHz | 2.5 | |||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 50A, VGS = 10 V | 25 | ns | ||
| tr | Turn-On Rise Time | 18 | ns | |||
| td(off) | Turn-Off Delay Time | 55 | ns | |||
| tf | Turn-Off Fall Time | 19 | ns | |||
| Crss | Reverse transfer capacitance | 3.8 | pF | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V,IF=40A Tf=25 | 0.9 | V | ||
| trr | Reverse Recovery Time | VR = 400 V, IF= 50 A, diF/dt = 150 A / s | 170 | ns | ||
| Qrr | Reverse Recovery Charge | 1.1 | C | |||
| Imm | Peak reverse recovery current | 12 | A | |||
Applications
- PC power
- Server power supply
- Telecom
- Solar inverter
- Super charger for automobiles
2412021740_Bestirpower-BMW60N026UC1_C42401702.pdf
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