Power Amplifier Silicon PNP Transistor BLUE ROCKET S8550M-D SOT-23 Package Suitable Component
Key Attributes
Model Number:
S8550M-D
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550M-D
Package:
SOT-23
Product Description
Product Overview
The S8550M is a Silicon PNP transistor housed in a SOT-23 plastic package. It serves as a complementary pair to the S8050M and is designed for power amplifier applications. This transistor features a base (PIN 1), emitter (PIN 2), and collector (PIN 3).
Product Attributes
- Brand: FSB (implied by datasheet URL)
- Package Type: SOT-23 Plastic Package
- Complementary Pair: S8050M
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector to Base Voltage | VCBO | -40 | V |
| Collector to Emitter Voltage | VCEO | -25 | V |
| Emitter to Base Voltage | VEBO | -6.0 | V |
| Collector Current | IC | -800 | mA |
| Base Current | IB | -200 | mA |
| Collector Power Dissipation | PC | 200 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -65150 |
Electrical Characteristics (Ta=25)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector to Base Breakdown Voltage | VCBO | IC=-0.1mA, IE=0 | -40 | V | ||
| Collector to Emitter Breakdown Voltage | VCEO | IC=-2.0mA, IB=0 | -25 | V | ||
| Emitter to Base Breakdown Voltage | VEBO | IE=-0.1mA, IC=0 | -6.0 | V | ||
| Collector Cut-Off Current | ICBO | VCB=-35V, IE=0 | -0.1 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=-6.0V, IC=0 | -0.1 | A | ||
| DC Current Gain | hFE(1) | VCE=-1.0V, IC=-100mA | 85 | 300 | ||
| DC Current Gain | hFE(2) | VCE=-1.0V, IC=-500mA | 40 | |||
| DC Current Gain | hFE(3) | VCE=-1.0V, IC=-5.0mA | 45 | |||
| Collector-emitter Saturation Voltage | VCE(sat) | IC=-500mA, IB=-50mA | -0.28 | -0.6 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-500mA, IB=-50mA | -0.98 | -1.2 | V | |
| Base-Emitter Voltage | VBE | VCE=-1.0V, IC=-10mA | -0.66 | -1.0 | V | |
| Transition Frequency | fT | VCE=-10V, IC=-50mA | 100 | 200 | MHz | |
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1.0MHz | 15 | pF |
Marking Codes
| hFE Class | Marking |
|---|---|
| B (85160) | HY4B |
| C (120200) | HY4C |
| D (160300) | HY4D |
Packaging Specifications
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Reel Dimension | Box Dimension (mm) |
|---|---|---|---|---|---|---|---|
| SOT-23 | 3,000 | 10 | 30,000 | 6 | 180,000 | 78 | 390385205 |
Soldering Profile (Pb-Free)
Temperature Profile for IR Reflow Soldering:
- Preheating: 150~180, Time: 60~90 sec.
- Peak Temp.: 2455, Duration: 50.5 sec.
- Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions:
- Temperature: 2605
- Time: 101 sec.
2410121234_BLUE-ROCKET-S8550M-D_C305484.pdf
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