Silicon NPN Transistor BLUE ROCKET MMBT2222A with 75V Collector Base Voltage and 600mA Current

Name: Silicon NPN Transistor BLUE ROCKET MMBT2222A with 75V Collector Base Voltage and 600mA Current
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMBT2222A
Availability: InStock

Key Attributes

Model Number: MMBT2222A

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

10nA

Pd - Power Dissipation:

350mW

Transition Frequency(fT):

300MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

600mA

Collector - Emitter Voltage VCEO:

40V

Operating Temperature:

Mfr. Part #:

MMBT2222A

Package:

SOT-23

Product Description

Product Overview

The MMBT2222A is a silicon NPN transistor designed for general-purpose amplification and switching applications. It features a collector current capability of up to 600 mA and is housed in a compact SOT-23 plastic package. This transistor is suitable for a wide range of electronic circuits requiring reliable amplification.

Product Attributes

Package Type: SOT-23
Transistor Type: NPN Silicon
Marking Code: H1P (H: Company Code, 1P: Product Type Code)

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	75	V
Collector to Emitter Voltage	VCEO	40	V
Emitter to Base Voltage	VEBO	6.0	V
Collector Current	IC	600	mA
Collector Power Dissipation	PC	350	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=10A, IE=0			75	V
Collector to Emitter Breakdown Voltage	VCEO	IC=10mA, IB=0			40	V
Emitter to Base Breakdown Voltage	VEBO	IE=10A, IC=0			6.0	V
Collector Cut-Off Current	ICBO	VCB=60V, IE=0			0.01	A
Base Cut-Off Current	IEBO	VEB=5.0V, IC=0			0.1	A
DC Current Gain	hFE(1)	VCE=10V, IC=150mA*	100		300
Collector-Emitter Saturation Voltage	VCE(sat) (1)	IC=150mA, IB=15mA			0.3	V
Collector-Emitter Saturation Voltage	VCE(sat) (2)	IC=500mA, IB=50mA			1.0	V
Base-Emitter Saturation Voltage	VBE(sat) (1)	IC=150mA, IB=15 mA		0.6	1.2	V
Base-Emitter Saturation Voltage	VBE(sat) (2)	IC=500mA, IB=50mA			2.0	V
Output Capacitance	Cob	VCB=10V, f=1.0MHz, IE=0			8.0	pF
Transition Frequency	fT	IC=20mA, VCE=20V, f=100MHz			300	MHz
TurnOn Time	ton	VCC=30V, VBE=-0.5V, IC=150mA, IB1=15mA			35	ns
TurnOff Time	toff	VCC=30V, IC=150mA, IB1=IB2=15mA			285	ns

* Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Packaging Specifications

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Reel Dimensions (78)	Inner Box Dimensions (mm)	Outer Box Dimensions (mm)
SOT-23	3,000	10	30,000	6	180,000		180120180	390385205

Soldering Profile (Pb-Free)

Preheating: 150~180, Duration: 60~90 seconds
Peak Temperature: 2455, Duration: 50.5 seconds
Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions

Temperature: 2605
Time: 101 sec

2410121238_BLUE-ROCKET-MMBT2222A_C305427.pdf

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