TO-92LM package PNP transistor BLUE ROCKET 2SB647A-C suitable for various amplification applications

Name: TO-92LM package PNP transistor BLUE ROCKET 2SB647A-C suitable for various amplification applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2SB647A-C
Availability: InStock

Key Attributes

Model Number: 2SB647A-C

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

10uA

Pd - Power Dissipation:

900mW

Transition Frequency(fT):

140MHz

Type:

PNP

Current - Collector(Ic):

Collector - Emitter Voltage VCEO:

100V

Operating Temperature:

Mfr. Part #:

2SB647A-C

Package:

TO-92LM

Product Description

Product Overview

The 2SB647(A) is a Silicon PNP transistor designed for low-frequency power amplification. It is housed in a TO-92LM plastic package and is complementary to the 2SD667(A). This transistor is suitable for various amplification applications.

Product Attributes

Complementary Pair: 2SD667(A)
Package Type: TO-92LM Plastic Package
Transistor Type: PNP Silicon Transistor

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-120	V
Collector to Emitter Voltage (2SB647)	VCEO	-80	V
Collector to Emitter Voltage (2SB647A)	VCEO	-100	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current (DC)	IC	-1.0	A
Collector Current (Pulse)	ICP	-2.0	A
Collector Power Dissipation	PC	900	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=-10A, IE=0	-120			V
Collector to Emitter Breakdown Voltage (2SB647)	VCEO	IC=-1.0mA, RBE=	-80			V
Collector to Emitter Breakdown Voltage (2SB647A)	VCEO	IC=-1.0mA, RBE=	-100			V
Emitter to Base Breakdown Voltage	VEBO	IE=-10A, IC=0	-5.0			V
Collector Cut-Off Current	ICBO	VCB=-100V, IE=0			-10	A
DC Current Gain (hFE(1))	hFE(1)	VCE=-5.0V, IC=-150mA	60		320
DC Current Gain (hFE(2))	hFE(2)	VCE=-5.0V, IC=-500mA	30
Collector to Emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB=-50mA			-1.0	V
Base to Emitter Voltage	VBE	VCE=-5.0V, IC=-150mA			-1.5	V
Transition Frequency	fT	VCE=-5.0V, IC=-150mA		140		MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1.0MHz		12		pF

Marking Instructions

BR: Company Code
B647A: Product Type
C: hFE Classifications Symbol
****: Lot No. Code (changes with Lot No.)

Temperature Profile for Dip Soldering (Pb-Free)

Preheating: 25~150, Time: 60~90sec
Peak Temp.: 2555, Duration: 50.5sec
Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions

Temperature: 2705
Time: 101 sec

Packaging Specifications

Bulk Package

Package Type	Units/Bag	Bags/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Packaging Dimensions (unit: mm)
TO-92LM	1,000	8	8,000	5	40,000	Bag: 135190; Inner Box: 237172102; Outer Box: 560245195

Ammo Package

Package Type	Units/tape	Tape/Inner Box	Rows/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Packaging Dimensions (unit: mm)
TO-92LM	2,500	1	100	10	25,000	Inner Box: 32823042; Outer Box: 547407268

2410121234_BLUE-ROCKET-2SB647A-C_C358368.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.

TO-92LM package PNP transistor BLUE ROCKET 2SB647A-C suitable for various amplification applications

Product Overview

Product Attributes