Low frequency power amplification transistor BLUE ROCKET 2SB649AD-C silicon PNP in TO-252 plastic package
Key Attributes
Model Number:
2SB649AD-C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
140MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
2SB649AD-C
Package:
TO-252
Product Description
Product Overview
The 2SB649AD is a Silicon PNP transistor housed in a TO-252 Plastic Package. It serves as a complementary pair with the 2SD669AD and is designed for low-frequency power amplification applications. This transistor is suitable for various electronic circuits requiring PNP amplification.
Product Attributes
- Brand: FSB
- Package Type: TO-252 Plastic Package
- Transistor Type: PNP Silicon
- Complementary Pair: 2SD669AD
- Application: Low frequency power amplifier
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector to Base Voltage | VCBO | -180 | V |
| Collector to Emitter Voltage | VCEO | -160 | V |
| Emitter to Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -1.5 | A |
| Peak Collector Current | ICP | -3.0 | A |
| Collector Power Dissipation (Ta=25) | PC | 1.0 | W |
| Collector Power Dissipation (Tc=25) | PC | 20 | W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector to Base Breakdown Voltage | VCBO | IC=-1.0mA, IE=0 | -180 | V | ||
| Collector to Emitter Breakdown Voltage | VCEO | IC=-10mA, RBE= | -160 | V | ||
| Emitter to Base Breakdown Voltage | VEBO | IE=-1.0mA, IC=0 | -5.0 | V | ||
| Collector Cut-Off Current | ICBO | VCB=-160V, IE=0 | -10 | A | ||
| DC Current Gain | hFE | VCE=-5.0V, IC=-150mA | 60 | 320 | ||
| VCE=-5.0V, IC=-500mA | 30 | |||||
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=-500mA, IB=-50mA | -1.0 | V | ||
| Base to Emitter Saturation Voltage | VBE(sat) | VCE=-5.0V, IC=-150mA | -1.5 | V | ||
| Transition Frequency | fT | VCE=-5.0V, IC=-150mA | 140 | MHz | ||
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1.0MHz | 27 | pF |
Package Dimensions
Refer to the '' (Package Dimensions) section in the original datasheet for visual representation.
Marking Instructions
Marking Code Breakdown:
- BR: Company Code
- B649AD: Product Type
- B: hFE Classification Symbol
- ****: Lot No. Code (changes with Lot No.)
Packaging Specifications
Reel Package:
- Package Type: TO-252
- Units/Reel: 2,500
- Reels/Inner Box: 2
- Units/Inner Box: 5,000
- Inner Boxes/Outer Box: 5
- Units/Outer Box: 25,000
- Reel Dimensions: 1316
- Inner Box Dimensions: 36036050
- Outer Box Dimensions: 385257392
Tube Package:
- Package Type: TO-251/252
- Units/Tube: 75
- Tubes/Inner Box: 48
- Units/Inner Box: 3,600
- Inner Boxes/Outer Box: 5
- Units/Outer Box: 18,000
- Tube Dimensions: 52620.55.25
- Inner Box Dimensions: 55516450
- Outer Box Dimensions: 575290180
Soldering Profile
Temperature Profile for Dip Soldering (Pb-Free):
- Preheating: 25~150, Time: 60~90 seconds
- Peak Temperature: 2455, Duration: 50.5 seconds
- Cooling Speed: 2~10/sec
Resistance to Soldering Heat Test Conditions:
- Temperature: 2605
- Time: 101 seconds
1912111437_BLUE-ROCKET-2SB649AD-C_C358469.pdf
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