Low Frequency Power Amplifier Silicon NPN Transistor BLUE ROCKET 2SD667A-C in TO92LM Plastic Package

Name: Low Frequency Power Amplifier Silicon NPN Transistor BLUE ROCKET 2SD667A-C in TO92LM Plastic Package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2SD667A-C
Availability: InStock

Key Attributes

Model Number: 2SD667A-C

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

10uA

Pd - Power Dissipation:

900mW

Transition Frequency(fT):

140MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

Collector - Emitter Voltage VCEO:

100V

Operating Temperature:

Mfr. Part #:

2SD667A-C

Package:

TO-92-3

Product Description

Product Overview

The 2SD667(A) is a silicon NPN transistor designed for low-frequency power amplification. It is housed in a TO-92LM plastic package and is complementary to the 2SB647(A). This transistor is suitable for various low-frequency power amplifier applications.

Product Attributes

Brand: FSB (implied by datasheet URL and company code 'BR')
Package Type: TO-92LM Plastic Package
Transistor Type: NPN Silicon
Complementary Pair: 2SB647(A)
Application: Low frequency power amplifier

Technical Specifications

Parameter	Symbol	Model	Rating	Unit
Collector to Base Voltage	VCBO	2SD667(A)	120	V
Collector to Emitter Voltage	VCEO	2SD667	80	V
Collector to Emitter Voltage	VCEO	2SD667A	100	V
Emitter to Base Voltage	VEBO	2SD667(A)	5.0	V
Collector Current (DC)	IC	2SD667(A)	1.0	A
Collector Current (Pulse)	ICP	2SD667(A)	2.0	A
Collector Power Dissipation	PC	2SD667(A)	900	mW
Junction Temperature	Tj	2SD667(A)	150
Storage Temperature Range	Tstg	2SD667(A)	-55150

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=10A, IE=0			120	V
Collector to Emitter Breakdown Voltage	VCEO	IC=1.0mA, IB=0			80 (2SD667) / 100 (2SD667A)	V
Emitter to Base Breakdown Voltage	VEBO	IE=10A, IC=0			5.0	V
Collector Cut-Off Current	ICBO	VCB=100V, IE=0			10	A
DC Current Gain	hFE(1)	VCE=5.0V, IC=150mA	60		320
DC Current Gain	hFE(2)	VCE=5.0V, IC=500mA	30
Collector to Emitter Saturation Voltage	VCE(sat)	IC=500mA, IB=50mA			1.0	V
Base to Emitter Saturation Voltage	VBE	VCE=5.0V, IC=150mA			1.5	V
Transition Frequency	fT	VCE=5.0V, IC=150mA		140		MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1.0MHz			12	pF

Packaging Specifications

Bulk Package

Package Type	Units/Bag	Bags/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Bag Dimensions (mm)	Inner Box Dimensions (mm)	Outer Box Dimensions (mm)
TO-92LM	1,000	8	8,000	5	40,000	135190	237172102	560245195

Ammo Package

Package Type	Units/Tape	Tape/Inner Box	Rows/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Tape Dimensions (mm)	Inner Box Dimensions (mm)	Outer Box Dimensions (mm)
TO-92LM	2,500	1	100	10	25,000		32823042	480346235	547407268

Notices

Soldering Heat Resistance Test Conditions

Temperature: 2705
Time: 101 sec.

Temperature Profile for Dip Soldering (Pb-Free)

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2555, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Marking Instructions

BR: Company Code
D667A: Product Type
B: hFE Classifications Symbol
****: Lot No. Code (changes with Lot No.)

Example Marking: BR D667A B ****

Pin Configuration

PIN 1: Base
PIN 2: Collector
PIN 3: Emitter

hFE Classifications

Symbol	hFE Range
B	60120
C	100200
D	160320

2410121234_BLUE-ROCKET-2SD667A-C_C305394.pdf

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