TO-92LM Package PNP Silicon Transistor BLUE ROCKET 2SA1020-Y Power Amplification Switching Component
Key Attributes
Model Number:
2SA1020-Y
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
900mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SA1020-Y
Package:
TO-92LM
Product Description
Product Overview
The 2SA1020 is a Silicon PNP transistor housed in a TO-92LM plastic package. It is designed for power amplification and switching applications, offering low collector saturation voltage and high-speed switching times. This transistor is a complementary pair with the 2SC2655.
Product Attributes
- Brand: Fsb (implied by URL http://www.fsbrec.com)
- Package Type: TO-92LM Plastic Package
- Transistor Type: PNP Silicon
Technical Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector to Base Voltage | VCBO | -50 | V |
| Collector to Emitter Voltage | VCEO | -50 | V |
| Emitter to Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -2.0 | A |
| Collector Power Dissipation | PC | 900 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector to Emitter Breakdown Voltage | VCEO | IC=-10mA IB=0 | -50 | V | ||
| Collector Cut-Off Current | ICBO | VCB=-50V IE=0 | -1.0 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=-5.0V IC=0 | -1.0 | A | ||
| DC Current Gain | hFE(1) | VCE=-2.0V IC=-0.5A | 70 | 240 | ||
| hFE(2) | VCE=-2.0V IC=-1.5A | 40 | ||||
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=-1.0A IB=-0.05A | -0.5 | V | ||
| Base to Emitter Saturation Voltage | VBE(sat) | IC=-1.0A IB=-0.05A | -1.2 | V | ||
| Transition Frequency | fT | VCE=-2.0V IC=-0.5A | 50 | 100 | MHz | |
| Collector output capacitance | Cob | VCB=-10V IE=0 f=1.0MHz | 40 | pF | ||
| Turn-Off Time | tf | (as shown) | 0.1 | s | ||
| Turn-On Time | ton | 0.1 | s | |||
| Storage Time | tstg | 1.0 | s |
Packaging Specifications
| Package Type | Units/Bag | Bags/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Bag Dimensions (mm) | Inner Box Dimensions (mm) | Outer Box Dimensions (mm) |
|---|---|---|---|---|---|---|---|---|
| BULK (TO-92LM) | 1,000 | 8 | 8,000 | 5 | 40,000 | 135190 | 237172102 | 560245195 |
| AMMO (TO-92LM) | 2,500 | 1 | 100 | 10 | 25,000 | 32823042 | 480346235 | 547407268 |
Soldering Information
Temperature Profile for Dip Soldering (Pb-Free):
- Preheating: 25~150, Time: 60~90 sec.
- Peak Temp: 2555, Duration: 50.5 sec.
- Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions:
- Temperature: 2705
- Time: 101 sec.
2410121234_BLUE-ROCKET-2SA1020-Y_C358544.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
