86--136 6733 2386
quality NPN Silicon Transistor BLUE ROCKET 2SC1815M-GR SOT-23 Plastic Package Ideal for Driver Stage Amplifier factory
quality NPN Silicon Transistor BLUE ROCKET 2SC1815M-GR SOT-23 Plastic Package Ideal for Driver Stage Amplifier factory

NPN Silicon Transistor BLUE ROCKET 2SC1815M-GR SOT-23 Plastic Package Ideal for Driver Stage Amplifier

Key Attributes
Model Number: 2SC1815M-GR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
80MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC1815M-GR
Package:
SOT-23
Product Description

Product Overview

The 2SC1815M is a Silicon NPN transistor housed in a SOT-23 plastic package. It offers high voltage and current capabilities, excellent hFE linearity, and a low noise figure. This transistor is ideal for general-purpose low-frequency amplification and driver stage amplifier applications.

Product Attributes

  • Brand: FSB (implied by datasheet URL)
  • Package Type: SOT-23 Plastic Package
  • Transistor Type: NPN Silicon

Technical Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current IC 150 mA
Base Current IB 50 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut-Off Current ICBO VCB=60V, IE=0 0.1 A
Emitter Base Cut-Off Current IEBO VEB=5.0V, IC=0 0.1 A
DC Current Gain hFE(1) VCE=6.0V, IC=2.0mA 70 700
DC Current Gain hFE(2) VCE=6.0V, IC=150mA 25 100
Collector to Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA 0.1 0.25 V
Base to Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA 1.0 V
Transition Frequency fT VCE=10V, IC=1.0mA 80 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz 2.0 3.5 pF
Base Intrinsic Resistance rbb VCB=10V, IC=1.0mA, f=30MHz 50
Noise Figure NF VCE=6.0V, IC=0.1mA, Rg=10K, f=1.0KHz 1.0 10 dB
hFE Classifications Symbol hFE Range Marking
O 70140 HHFO
Y 120240 HHFY
GR 200400 HHFG
BL 350700 HHFB
Packaging Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimensions (Reel) Dimensions (Box)
SOT-23 (7" Reel) 3,000 10 30,000 6 180,000 78 180120180

2410121238_BLUE-ROCKET-2SC1815M-GR_C305425.pdf

Related Products
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications factory
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
quality Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction factory
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.