power conversion n channel mosfet BLUE ROCKET BRCS035N04SDP with low gate charge and halogen free design

Key Attributes
Model Number: BRCS035N04SDP
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
136A
RDS(on):
3mΩ@10V;4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Output Capacitance(Coss):
740pF
Pd - Power Dissipation:
118W
Input Capacitance(Ciss):
9.6nF
Gate Charge(Qg):
51nC@10V;23nC@4.5V
Mfr. Part #:
BRCS035N04SDP
Package:
TO-252
Product Description

Product Overview

The BRCS035N04SDP is an N-channel MOSFET in a TO-252 plastic package, designed for low voltage applications. It features low RDS(on), low gate charge, low Crss, and fast switching speeds, making it suitable for high-efficiency power conversion in automotive circuits, DC/DC converters, and portable battery-operated products. This product meets the stringent requirements of automotive applications.

Product Attributes

  • Brand: FS (implied by URL)
  • Package Type: TO-252 Plastic Package
  • Channel Type: N-Channel
  • Halogen Content: Halogen-Free Product

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 40 V
Drain Current ID(Tc=25) 136 A
Drain Current - Pulsed IDM 280 A
Gate-Source Voltage VGS ±20 V
Avalanche Current IAS 33 A
Single Pulsed Avalanche Energy (L=0.5mH) EAS 435 mJ
Power Dissipation PD(Tc=25) 118 W
Junction and Storage Temperature Range TJ, TSTG -55 to 150
Thermal Resistance-Junction to Ambient RJA 50 Steady-State /W
Thermal Resistance-Junction to Ambient RJA 20 t≤10s /W
Thermal Resistance-Junction to Case RJC 1.06 Steady-State /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS 40 VGS=0V, ID=250µA 40 V
Zero Gate Voltage Drain Current IDSS 1.0 VDS=40V, VGS=0V 1.0 µA
Gate-Body Leakage Current IGSS ±100 VGS=±20V, VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) 1.0-1.7-2.5 VDS=VGS, ID=250µA 1.0 1.7 2.5 V
Static Drain-Source On-Resistance RDS(on) 3.0-3.5 VGS=10V, ID=20A 3.0 3.5
Static Drain-Source On-Resistance RDS(on) 4.0-5.0 VGS=4.5V, ID=10A 4.0 5.0
Drain-Source Diode Forward Voltage VSD 1.4 VGS=0V, IS=1A 1.4 V
Gate resistance Rg 1.16 VGS=0V, VDS=0V, f=1MHz 1.16 Ω
Input Capacitance Ciss 9600 VDS=25V, VGS=0V, f=1.0MHz 9600 pF
Output Capacitance Coss 740 VDS=25V, VGS=0V, f=1.0MHz 740 pF
Reverse Transfer Capacitance Crss 650 VDS=25V, VGS=0V, f=1.0MHz 650 pF
Total Gate Charge Qg(10V) Qg(10V) 51 VGS=10V, VDS=20V, ID=20A 51 nC
Total Gate Charge Qg(4.5V) Qg(4.5V) 23 VGS=4.5V, VDS=20V, ID=10A 23 nC
Gate Source Charge Qgs 13.2 VGS=10V, VDS=20V, ID=20A 13.2 nC
Gate Drain Charge Qgd 3.1 VGS=10V, VDS=20V, ID=20A 3.1 nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time td(on) 11 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 11 ns
Turn-On Rise Time tr 11 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 11 ns
Turn-Off Delay Time td(off) 40 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 40 ns
Turn-Off Fall Time tf 10 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 10 ns

Package Dimensions

See attached Package Dimensions drawing.

Marking Instructions

The marking consists of:

  • BR: Company Code
  • 035N04S: Product Type Code
  • ****: Lot No. Code (changes with Lot No.)

Packaging Specifications

Reel Package

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (mm)
TO-252 2,500 2 5,000 6 30,000 13×16, 360×360×50

Tube Package

Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (mm)
TO-251/252 75 48 3,600 5 18,000 526×20.5×5.25, 555×164×50

Notices

Temperature Profile for IR Reflow Soldering (Pb-Free)

  • Preheating: 150~180, Time: 60~90 sec.
  • Peak Temp.: 245±5, Duration: 5±0.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

  • Temp.: 260±5
  • Time: 10±1 sec.

2504101957_BLUE-ROCKET-BRCS035N04SDP_C46962488.pdf

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