industrial power MOSFET BLUE ROCKET BRCS120P04DP with TO 252 package and halogen free construction
Key Attributes
Model Number:
BRCS120P04DP
Product Custom Attributes
Drain To Source Voltage:
48V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
BRCS120P04DP
Package:
TO-252
Product Description
Product Overview
The BRCS120P04DP is a P-channel MOSFET in a TO-252 plastic package. It offers low on-resistance and fast switching speeds, making it suitable for power management in industrial DC/DC converters. This product is halogen-free.
Product Attributes
- Brand: FS (implied by http://www.fsbrec.com)
- Package Type: TO-252 Plastic Package
- Channel Type: P-Channel
- Product Features: Low On-Resistance, Fast Switching, Halogen-Free
- Marking Code: BR 120P04 **** (BR: Company Code, 120P04: Product Type, ****: Lot No. Code)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Drain Current - Continuous | ID(Tc=25) | -50 | A | |||
| Drain Current Pulsed | IDM | -128 | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Power Dissipation | PD(Tc=25) | 62.5 | W | |||
| Single Pulse Avalanche Energy (L=0.5mH) | EAS | 317.5 | mJ | |||
| Avalanche Current (L=0.5mH) | IAS | -31.5 | A | |||
| Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | |||
| Thermal resistance, junction - ambient (t 10s) | RJA | 20 | / W | |||
| Thermal resistance, junction - case (Steady-State) | RJC | 2.0 | / W | |||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=-250A, VGS=0V | -40 | -48 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | -1 | uA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-20A | 11.4 | 14 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-10A | 15 | 20 | m | |
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -1.2 | V | ||
| Input Capacitance | Ciss | VDS=-25V, VGS=0V, f=1.0MHz | 4760 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=0V, f=1MHz | 2800 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=0V, f=1MHz | 1960 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 17.5 | |||
| Total Gate Charge | Qg(10V) | VGS=-10V, VDS=-20V, ID=-20A | 43 | nC | ||
| Total Gate Charge | Qg(4.5V) | VGS=-4.5V, VDS=-20V, ID=-10A | 19 | nC | ||
| Gate Source Charge | Qgs | VGS=-10V, VDS=-20V, ID=-20A | 7.2 | nC | ||
| Gate Drain Charge | Qgd | VGS=-10V, VDS=-20V, ID=-20A | 8.5 | nC | ||
| Electrical Characteristics (Ta=25) | ||||||
| Turn-On Delay Time | td(on) | VGS=-10V, VDS=-20V, RL=1, RGEN=3 | 9.4 | ns | ||
| Turn-On Rise Time | tr | VGS=-10V, VDS=-20V, RL=1, RGEN=3 | 20 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=-10V, VDS=-20V, RL=1, RGEN=3 | 56 | ns | ||
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-20V, RL=1, RGEN=3 | 32 | ns | ||
Packaging
Reel Package
| Package Type | Units | Dimension | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box |
|---|---|---|---|---|---|---|---|
| TO-252 | 2,500 | 1316 | 2 | 5,000 | 6 | 30,000 |
Tube Package
| Package Type | Units | Dimension | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box |
|---|---|---|---|---|---|---|---|
| TO-251/252 | 75 | 52620.55.25 | 48 | 3,600 | 5 | 18,000 |
Soldering Information
Temperature Profile for IR Reflow Soldering (Pb-Free)
- Preheating: 150~180, Time: 60~90 sec.
- Peak Temp.: 2455, Duration: 50.5 sec.
- Cooling Speed: 2~10/sec.
Resistance to Soldering Heat Test Conditions
- Temperature: 2605
- Time: 101 sec.
2504101957_BLUE-ROCKET-BRCS120P04DP_C46962483.pdf
Related Products
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
