Trench technology MOSFET BLUE ROCKET BRCS50N06DP designed for power conversion in automotive and DC DC systems
Key Attributes
Model Number:
BRCS50N06DP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
1.01nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
BRCS50N06DP
Package:
TO-252
Product Description
Product Overview
The BRCS50N06DP is an N-channel MOSFET designed for low-voltage applications. It features low RDS(on), low gate charge, low Crss, and fast switching speeds, utilizing Trench Technologies and a halogen-free product design. This device is well-suited for high-efficiency power conversion in automotive circuits, DC/DC converters, and portable or battery-operated products.
Product Attributes
- Brand: FSBREC
- Package Type: TO-252 Plastic Package
- Technology: Trench Technologies
- Material: Halogen-Free Product
Technical Specifications
| Parameter | Symbol | Rating Unit | Value |
|---|---|---|---|
| Drain-Source Voltage | VDSS | V | 60 |
| Drain Current (Tc=25) | ID(Tc=25) | A | 50 |
| Drain Current - Pulsed | IDM | A | 200 |
| Gate-Source Voltage | VGS | V | 20 |
| Avalanche Current | IAS | A | 20 |
| Single Pulsed Avalanche Energy | EAS | mJ | 170 |
| Power Dissipation (Tc=25) | PD(Tc=25) | W | 60 |
| Storage Temperature Range | Tstg | -55150 | |
| Thermal Resistance-Junction to Case | RJC | /W | 2.1 |
| Thermal Resistance-Junction to Ambient | RJA | /W | 50 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | 66 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | A | ||
| Zero Gate Voltage Drain Current (TC=150) | IDSS | VDS=48V, TC=150 | 10 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.7 | 3 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=25A | 11.8 | 15 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=18A | 15.5 | 20 | m | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=1A | 1.25 | V | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 1.49 | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 1010 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 250 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 280 | pF | ||
| Total Gate Charge (10V) | Qg(10V) | VGS=10V, VDS=30V, ID=20A | 47.5 | 68 | nC | |
| Total Gate Charge (4.5V) | Qg(4.5V) | VGS=4.5V, VDS=30V, ID=18A | 24 | 35 | nC | |
| Gate Source Charge | Qgs | VGS=10V, VDS=30V, ID=20A | 6 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=30V, ID=20A | 14.5 | nC | ||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=30V, RL=1.5, RGEN=3 | 8 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=30V, RL=1.5, RGEN=3 | 5 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V, VDS=30V, RL=1.5, RGEN=3 | 30 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=30V, RL=1.5, RGEN=3 | 5.5 | ns |
| Package Type | Units | Packaging Quantity | Dimension (unit: mm) | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box |
|---|---|---|---|---|---|---|---|---|
| Reel Package | TO-252 | 2,500 | 1316 | 2,500 | 2 | 5,000 | 6 | 30,000 |
| Tube Package | TO-251/252 | 75 | 52620.55.25 | 75 | 48 | 3,600 | 5 | 18,000 |
2410121234_BLUE-ROCKET-BRCS50N06DP_C22400493.pdf
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