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quality switching MOSFET BLUE ROCKET BRF5N65 N channel type with low feedback capacitance in TO 220F package factory
quality switching MOSFET BLUE ROCKET BRF5N65 N channel type with low feedback capacitance in TO 220F package factory

switching MOSFET BLUE ROCKET BRF5N65 N channel type with low feedback capacitance in TO 220F package

Key Attributes
Model Number: BRF5N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.5pF
Number:
1 N-channel
Output Capacitance(Coss):
72pF
Input Capacitance(Ciss):
670pF
Pd - Power Dissipation:
54W
Mfr. Part #:
BRF5N65
Package:
TO-220F
Product Description

Product Overview

The BRF5N65 is an N-channel MOSFET in a TO-220F plastic package, designed for high-efficiency switching DC/DC converters and switch-mode power supplies. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for demanding power applications.

Product Attributes

  • Brand: FS (implied from fsbrec.com)
  • Package Type: TO-220F Plastic Package
  • Channel Type: N-Channel MOSFET
  • Origin: China (implied from Chinese text)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 650 V
Drain Current ID(Tc=25) 5.0 A
Drain Current ID(Tc=100) 2.6 A
Drain Current - Pulsed IDM 18 A
Gate-Source Voltage VGSS ±30 V
Single Pulsed Avalanche Energy EAS 210 mJ
Repetitive Avalanche Energy EAR 10 mJ
Avalanche Current IAR 4.5 A
Power Dissipation PD(Tc=25) 54 W
Operating and Storage Temperature Range TJ,TSTG -55 150
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 V
Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V 1.0 µA
VDS=480V, TC=125℃ 10 µA
Gate-Body Leakage Current, Forward IGSS VGS=±30V, VDS=0V ±0.1 µA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=2.25A 2.0 2.5 Ω
Forward Transconductance gFS VDS=40V, ID=2.25A 4.7 S
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=4.5A 1.4 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 515 670 pF
Output Capacitance Coss 55 72 pF
Reverse Transfer Capacitance Crss 6.5 8.5 pF
Turn-On Delay Time td(on) VDD=300V, ID=4.5A, RG=25Ω 10 30 ns
Turn-On Rise Time tr 42 90 ns
Turn-Off Delay Time td(off) 38 85 ns
Turn-Off Fall Time tf 46 100 ns

Product Packaging & Marking

  • Marking: BR **** 5N65 (BR: Company Code, 5N65: Product Type, ****: Lot No. Code)
  • Bulk Packaging: TO-220/F, 200 Units/Bag, 10 Bags/Inner Box, 2,000 Units/Inner Box, 5 Inner Boxes/Outer Box, 10,000 Units/Outer Box.
  • Tube Packaging: TO-220/F, 50 Units/Tube, 20 Tubes/Inner Box, 1,000 Units/Inner Box, 5 Inner Boxes/Outer Box, 5,000 Units/Outer Box.
  • Resistance to Soldering Heat Test Conditions: Temp.: 270±5, Time: 10±1 sec.
  • Temperature Profile for Dip Soldering (Pb-Free): Preheating: 25~150, Time: 60~90sec; Peak Temp.: 255±5, Duration: 5±0.5sec; Cooling Speed: 2~10/sec.

2410121236_BLUE-ROCKET-BRF5N65_C328549.pdf

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