Dual P CHANNEL MOSFET BLUE ROCKET BRCS200P03DSC SOP8 Plastic Package Power Management Component
Key Attributes
Model Number:
BRCS200P03DSC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.1A
RDS(on):
35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
350pF
Output Capacitance(Coss):
580pF
Input Capacitance(Ciss):
1.43nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
20nC@10V;9.8nC@4.5V
Mfr. Part #:
BRCS200P03DSC
Package:
SOP-8
Product Description
Product Overview
The BRCS200P03DSC is a Dual P-CHANNEL MOSFET housed in a SOP-8 plastic package. This HF product is designed for power management applications in notebook computers, portable equipment, and battery-powered systems. It features a VDS of -30V, ID of -7.1A, and low RDS(ON) values of less than 22m at VGS=-10V and less than 35m at VGS=-4.5V.
Product Attributes
- Brand: Fsb (implied by URL http://www.fsbrec.com)
- Package Type: SOP-8 Plastic Package
- Product Type: Dual P-CHANNEL MOSFET
- Material: Halogen-Free Product (HF Product)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Drain Current Continuous | ID | -7.1 | A | |||
| Drain Current Pulsed | IDM | -40 | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Power Dissipation | PD | 2 | W | |||
| Single Pulse Avalanche Energy (L=0.5mH) | EAS | 152 | mJ | |||
| Avalanche Current (L=0.5mH) | IAS | -19.5 | A | |||
| Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | |||
| Thermal resistance, junction - ambient (t 10s) | RJA | 62.5 | / W | |||
| Thermal resistance, junction - ambient (Steady-State) | RJA | 90 | / W | |||
| Thermal resistance, junction - Lead (Steady-State) | RJL | 40 | / W | |||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=-250A, VGS=0V | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -1.3 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-20A | 20 | 22 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-10A | 28 | 35 | m | |
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -1.2 | V | ||
| Input Capacitance | Ciss | VDS=-25V, VGS=0V, f=1.0MHz | 1430 | pF | ||
| Output Capacitance | Coss | VDS=-25V, VGS=0V, f=1.0MHz | 580 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-25V, VGS=0V, f=1.0MHz | 350 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 13 | |||
| Total Gate Charge | Qg(10V) | VGS=-10V, VDS=-15V, ID=-7.1A | 20 | nC | ||
| Total Gate Charge | Qg(4.5V) | VGS=-4.5V, VDS=-15V, ID=-10A | 9.8 | nC | ||
| Gate Source Charge | Qgs | VGS=-10V, VDS=-15V, ID=-7.1A | 3.7 | nC | ||
| Gate Drain Charge | Qgd | VGS=-10V, VDS=-15V, ID=-7.1A | 4.5 | nC | ||
| Electrical Characteristics (Ta=25) | ||||||
| Turn-On Delay Time | td(on) | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | 11 | ns | ||
| Turn-On Rise Time | tr | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | 5.6 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | 28 | ns | ||
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | 11 | ns | ||
Marking Code: BR **** 200P03D
Packaging: Reel Package (SOP/ESOP-8) - 4,000 Units/Reel
Temperature Profile for IR Reflow Soldering (Pb-Free):
- Preheating: 150~180, Time: 60~90sec
- Peak Temp.: 2455, Duration: 50.5sec
- Cooling Speed: 2~10/sec
Resistance to Soldering Heat Test Conditions: Temp.: 2605, Time: 101 sec.
2504101957_BLUE-ROCKET-BRCS200P03DSC_C46962466.pdf
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