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quality High Frequency N Channel MOSFET BLUE ROCKET BRCS060N04SZC with Low Gate Charge and Halogen Free Package factory
quality High Frequency N Channel MOSFET BLUE ROCKET BRCS060N04SZC with Low Gate Charge and Halogen Free Package factory

High Frequency N Channel MOSFET BLUE ROCKET BRCS060N04SZC with Low Gate Charge and Halogen Free Package

Key Attributes
Model Number: BRCS060N04SZC
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF
Number:
1 N-channel
Output Capacitance(Coss):
390pF
Pd - Power Dissipation:
37W
Mfr. Part #:
BRCS060N04SZC
Package:
PDFN-8(5x6)
Product Description

Product Overview

The BRCS060N04SZC is an N-Channel MOSFET designed for high-frequency applications, featuring low RDS(ON) to minimize conductive losses and low Gate Charge for fast switching. It boasts low thermal resistance and is a Halogen-Free (HF) product. This MOSFET is suitable for battery management, high-frequency point-of-load synchronous Buck converters for MB/NB/UMPC/VGA, networking DC-DC power systems, and load switch applications.

Product Attributes

  • Brand: FS (from http://www.fsbrec.com)
  • Product Type: N-Channel MOSFET
  • Package Type: PDFN56
  • Material: Plastic Package
  • Product Features: Low RDS(ON), Low Gate Charge, Low Thermal resistance, HF Product (Halogen-Free)
  • Marking Code: BR 060N04S ****

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 40 V
Drain Current ID(Tc=25) 60 A
Drain Current - Pulsed IDM 120 A
Gate-Source Voltage VGS 20 V
Single Pulsed Avalanche Energy EAS 78.5 mJ
Avalanche Current IAS 15 A
Power Dissipation PD(Tc=25) 37 W
Operating and Storage Temperature Range TJ,Tstg -55 150
Thermal resistance, junction - ambient (t 10s) RJA 25 / W
Thermal resistance, junction - case (Steady-State) RJC 3.4 / W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 40 46 V
Zero Gate Voltage Drain Current IDSS VDS=40V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 0.1 A
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 1.6 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 5.6 6 m
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 7.8 9 m
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=1A 1.2 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 990 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz 390 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz 42 pF
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 5.2
Total Gate Charge Qg(10V) VGS=10V, VDS=20V, ID=20A 20 nC
Total Gate Charge Qg(4.5V) VGS=4.5V, VDS=20V, ID=10A 8.4 nC
Gate Source Charge Qgs VGS=4.5V, VDS=20V, ID=10A 5.5 nC
Gate Drain Charge Qgd VGS=4.5V, VDS=20V, ID=10A 3.0 nC
Electrical Characteristics (Ta=25)
Turn-On Delay Time td(on) VGS=10V, VDS=20V, RL=1.0, RGEN=3.0 7.5 ns
Turn-On Rise Time tr VGS=10V, VDS=20V, RL=1.0, RGEN=3.0 2 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=20V, RL=1.0, RGEN=3.0 23.5 ns
Turn-Off Fall Time tf VGS=10V, VDS=20V, RL=1.0, RGEN=3.0 3.2 ns
Package Dimensions Dimension Unit
PDFN56
Packaging Specification Dimension Units
Reel Package Type 1312
Units/Reel 5000
Reels/Inner Box 2
Units/Inner Box 10000
Inner Boxes/Outer Box 6
Units/Outer Box 60000
Inner Box Dimension 36036050 mm
Outer Box Dimension 380335366 mm
Resistance to Soldering Heat Test Conditions Temperature Time
2605 101 sec
IR Reflow Soldering Temperature Profile (Pb-Free) Temperature Time
Preheating 150~180 60~90 sec
Peak Temperature 2455 50.5 sec
Cooling Speed 2~10/sec

2410121231_BLUE-ROCKET-BRCS060N04SZC_C22435010.pdf

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