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quality N Channel MOSFET BLUE ROCKET BRCS18N20RA TO 220 Plastic Package Suitable for Fast Switching Applications factory
quality N Channel MOSFET BLUE ROCKET BRCS18N20RA TO 220 Plastic Package Suitable for Fast Switching Applications factory

N Channel MOSFET BLUE ROCKET BRCS18N20RA TO 220 Plastic Package Suitable for Fast Switching Applications

Key Attributes
Model Number: BRCS18N20RA
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
RDS(on):
130mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
65pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
832pF@25V
Pd - Power Dissipation:
132W
Gate Charge(Qg):
27nC@10V
Mfr. Part #:
BRCS18N20RA
Package:
TO-220
Product Description

Product Overview

The BRCS18N20RA is an N-Channel MOSFET housed in a TO-220 plastic package. It is engineered for fast-switching applications, offering low gate charge and low RDS(on). This MOSFET is ideally suited for low-voltage applications, including automotive circuits, DC/DC converters, and high-efficiency power conversion for portable and battery-operated products.

Product Attributes

  • Brand: Fsb (implied by http://www.fsbrec.com)
  • Package Type: TO-220 Plastic Package
  • Marking Code: BR 18N20 **** (BR: Company Code, 18N20: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 200 V
Drain Current (Tc=25) ID(Tc=25) 18 A
Drain Current (Tc=100) ID(Tc=100) 13 A
Drain Current - Pulsed IDM 45 A
Gate-Source Voltage VGSS 20 V
Single Pulsed Avalanche Energy (L=10mH) EAS 125 mJ
Avalanche Current (L=10mH) IAS 9.5 A
Power Dissipation (Tc=25) PD(Tc=25) 132 W
Power Dissipation (Tc=100) PD(Tc=100) 52 W
Operating and Storage Temperature Range TJ,TSTG -55 150
Maximum Junction-to-Ambient (t10s) RJA 24 /W
Maximum Junction-to-Ambient (Steady-State) RJA 54 /W
Maximum Junction-to-Case (Steady-State) RJC 0.95 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 200 V
Zero Gate Voltage Drain Current IDSS VDS=200V, VGS=0V 1 A
Zero Gate Voltage Drain Current IDSS VDS=200V, TJ=55 5 A
Gate-Body Leakage Current Forward IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 3.0 V
On-State Resistance RDS(on) VGS=10V, ID=9A 130 170 m
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=18A 1.45 V
Electrical Characteristics (Ta=25)
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 6.5
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 832 pF
Output Capacitance Coss 149 pF
Reverse Transfer Capacitance Crss 65 pF
Total Gate Charge (Qg(10V)) Qg(10V) VGS=10V, VDS=100V, ID=18A 27 40 nC
Total Gate Charge (Qg(4.5V)) Qg(4.5V) 12 20 nC
Gate Source Charge Qgs 7 nC
Gate Drain Charge Qgd 3 nC
Turn-On Delay Time td(on) VGS=10V, VDS=100V, RL=5.5, RGEN=3 8 ns
Turn-On Rise Time tr 10 ns
Turn-Off Delay Time td(off) 30 ns
Turn-Off Fall Time tf 4 ns
Body Diode Reverse Recovery Time trr IF=18A, dI/dt=500A/s 60 ns
Body Diode Reverse Recovery Charge Qrr IF=18A, dI/dt=500A/s 800 nC

2410121250_BLUE-ROCKET-BRCS18N20RA_C668670.pdf

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