Fast Switching N Channel MOSFET BLUE ROCKET BRCS050N04BD with TO 263 Package and Halogen Free Design
Key Attributes
Model Number:
BRCS050N04BD
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
196A
RDS(on):
10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 N-channel
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
2.95nF
Pd - Power Dissipation:
347W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
BRCS050N04BD
Package:
TO-263
Product Description
Product Overview
The BRCS050N04BD is an N-channel MOSFET in a TO-263 plastic package, designed for high-efficiency applications. It features ultra-low on-resistance and fast switching speeds. This product is Halogen-Free (HF). It is well-suited for use in high-efficiency switched-mode power supplies, active power factor correction circuits, and electronic lamp ballasts based on half-bridge topology.
Product Attributes
- Brand: FS (implied by http://www.fsbrec.com)
- Product Type: N-Channel MOSFET
- Package Type: TO-263 Plastic Package
- Features: Ultra Low On-Resistance, Fast Switching, HF Product (Halogen-Free)
- Marking Code: BR 050N04
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Drain Current (Tc=25) | ID(Tc=25) | 196 | A | |||
| Pulsed Drain Current | IDM | 500 | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Single Pulsed Avalanche Energy (L=0.5mH) | EAS | 561.8 | mJ | |||
| Avalanche Current | IAS | 26.5 | A | |||
| Total Power Dissipation (Tc=25) | PD(Tc=25) | 347 | W | |||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient (t10s) | RJA | 15 | /W | |||
| Thermal Resistance-Junction to Ambient (Steady-State) | RJA | 60 | /W | |||
| Thermal Resistance-Junction to Case (Steady-State) | RJC | 0.36 | /W | |||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.7 | 3 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 4.5 | 5 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=10A | 7 | 10 | m | |
| Forward On Voltage | VSD | VGS=0V, IS=1A | 1.2 | V | ||
| Gate resistance | Rg | f=1MHz | 2.3 | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 2950 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 210 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 190 | pF | ||
| Electrical Characteristics (Ta=25) | ||||||
| Total Gate Charge | Qg(10V) | VGS=10V, VDS=20V, ID=20A | 70 | nC | ||
| Total Gate Charge | Qg(4.5V) | VGS=4.5V, VDS=20V, ID=20A | 15 | nC | ||
| Gate Source Charge | Qgs | VGS=10V, VDS=20V, ID=20A | 15 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=20V, ID=20A | 22 | nC | ||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=20V, RL=1, RGEN=3 | 15 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=20V, RL=1, RGEN=3 | 30 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V, VDS=20V, RL=1, RGEN=3 | 54 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=20V, RL=1, RGEN=3 | 20 | ns | ||
2410121231_BLUE-ROCKET-BRCS050N04BD_C22356957.pdf
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