power conversion N Channel MOSFET BLUE ROCKET BRCS150N10SZC with low RDS ON and fast switching speed

Key Attributes
Model Number: BRCS150N10SZC
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
46A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
600pF
Input Capacitance(Ciss):
1.14nF
Pd - Power Dissipation:
78W
Gate Charge(Qg):
32.5nC@10V
Mfr. Part #:
BRCS150N10SZC
Package:
PDFN-8(5x6)
Product Description

Product Overview

The BRCS150N10SZC is an N-Channel MOSFET designed for high-frequency applications. It features low RDS(ON) for minimized conductive loss, low Gate Charge for fast switching, and low thermal resistance. This HF (Halogen-Free) product is suitable for battery management, high-frequency point-of-load synchronous Buck converters for MB/NB/UMPC/VGA, networking DC-DC power systems, and load switch applications. The MOSFET is housed in a PDFN5*6 plastic package.

Product Attributes

  • Brand: BR (FSBREC)
  • Product Type: N-Channel MOSFET
  • Package Type: PDFN5*6
  • Product Features: HF Product (Halogen-Free)
  • Marking Code: BR 150N10S

Technical Specifications

Parameter Symbol Rating Unit
Drain-Source Voltage VDS 100 V
Continuous Drain Current ID 46 A
Pulsed Drain Current IDM 184 A
Gate-Source Voltage VGS 20 V
Power Dissipation (Tc=25) PD(Tc=25) 78 W
Avalanche energy (L=0.5mH) EAS 24.5 mJ
Avalanche Current (L=0.5mH) IAS 7.0 A
Junction and Storage Temperature Range Tj, Tstg -55 to 150
Maximum Junction-to-Ambient Steady-State (t 10s) RJA 17 /W
Maximum Junction-to-Case Steady-State RJC 1.6 /W
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage BVDSS ID=250uA, VGS=0V 100 109 V
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 uA
Gate-Body leakage current IGSS VDS=0V, VGS= 20V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A 14.8 15 m
VGS=4.5V, ID=10A 20.4 25 m
Diode Forward Voltage VSD IS=1A, VGS=0V 1.2 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 1140 pF
Output Capacitance Coss VGS=0V, f=1MHz 600 pF
Reverse Transfer Capacitance Crss VGS=0V, f=1MHz 60 pF
Gate resistance Rg VDS=0V, f=1MHz 1.6
Total Gate Charge Qg VGS=10V, VDS=50V, ID=20A 32.5 nC
VGS=4.5V, VDS=50V, ID=10A 15.5 nC
Gate Source Charge Qgs VGS=10V, VDS=50V, ID=20A 6.5 nC
Gate Drain Charge Qgd VGS=10V, VDS=50V, ID=20A 5 nC
Switching Times VGS=10V, VDS=50V, RL=2.5, RGEN=3 ns
Turn-On Delay Time td(on) 7 ns
Turn-On Rise Time tr 3 ns
Turn-Off Delay Time td(off) 27 ns
Turn-Off Fall Time tf 4 ns

Package Dimensions

PDFN5*6

Packaging Specifications

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (Reel) Dimension (Inner Box)
PDFN5*6 5000 2 10000 6 60000 1312 36036050

Soldering Profile

IR Reflow Soldering (Pb-Free):

  • Preheating: 150180, Time: 6090 sec.
  • Peak Temp.: 2455, Duration: 50.5 sec.
  • Cooling Speed: 210/sec.

Resistance to Soldering Heat Test Conditions:

  • Temperature: 2605
  • Time: 101 sec.

2410121227_BLUE-ROCKET-BRCS150N10SZC_C22448997.pdf

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