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quality 263 Plastic Package N Channel MOSFET BLUE ROCKET BRCS055N10SHBD for Synchronous Rectification and BMS factory
quality 263 Plastic Package N Channel MOSFET BLUE ROCKET BRCS055N10SHBD for Synchronous Rectification and BMS factory

263 Plastic Package N Channel MOSFET BLUE ROCKET BRCS055N10SHBD for Synchronous Rectification and BMS

Key Attributes
Model Number: BRCS055N10SHBD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 N-channel
Output Capacitance(Coss):
1.35nF
Input Capacitance(Ciss):
3.9nF
Pd - Power Dissipation:
140W
Gate Charge(Qg):
78nC@10V
Mfr. Part #:
BRCS055N10SHBD
Package:
TO-263
Product Description

Product Overview

The BRCS055N10SHBD is an N-channel MOSFET designed for high-frequency switching and synchronous rectification applications. It is suitable for use in Battery Management Systems (BMS) and motor control. This product is halogen-free and comes in a TO-263 plastic package.

Product Attributes

  • Brand: FS (implied by URL www.fsbrec.com)
  • Product Type: N-Channel MOSFET
  • Package Type: TO-263 Plastic Package
  • Halogen Free: Yes
  • Marking Code: BR (Company Code), 055N10SH (Product Type Code), **** (Lot No. Code)

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 100 V
Drain Current ID(Tc=25) 120 A
Pulsed Drain Current IDM 255 A
Gate-Source Voltage VGS 20 V
Single Pulsed Avalanche Energy (L=0.5mH) EAS 883.6 mJ
Avalanche Current IAS 47 A
Total Power Dissipation PD(Tc=25) 140 W
Junction and Storage Temperature Range TJ,TSTG -55 to 150
Thermal Resistance-Junction to Ambient (t10s) RJA 20 /W
Thermal Resistance-Junction to Ambient (Steady-State) RJA 75 /W
Thermal Resistance-Junction to Case (Steady-State) RJC 0.89 /W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250A 100 104
Zero Gate Voltage Drain Current IDSS A VDS=100V, VGS=0V 1
Gate-Body Leakage Current IGSS nA VGS=20V, VDS=0V 100
Gate Threshold Voltage VGS(th) V VDS=VGS, ID=250A 2 2.8 4
Static Drain-Source On-Resistance RDS(on) m VGS=10V, ID=20A 4.7 5.5
Static Drain-Source On-Resistance RDS(on) m VGS=6V, ID=10A 6.0 7.0
Forward On Voltage VSD V VGS=0V, IS=1A 1.4
Gate resistance Rg f=1MHz 3
Input Capacitance Ciss pF VDS=25V, VGS=0V, f=1MHz 3900
Output Capacitance Coss pF 1350
Reverse Transfer Capacitance Crss pF 150
Total Gate Charge Qg(10V) nC VGS=10V, VDS=50V, ID=20A 78
Gate Source Charge Qgs nC 23
Gate Drain Charge Qgd nC 18
Electrical Characteristics (Ta=25)
Turn-On Delay Time td(on) ns VGS=10V, VDS=50V, RL=2.5, RGEN=3 28.3
Turn-On Rise Time tr ns 24
Turn-Off Delay Time td(off) ns 62
Turn-Off Fall Time tf ns 33

Note: Electrical Characteristic Curve graphs are provided in the original datasheet.

Note: Package Dimensions are provided in the original datasheet.

Note: Soldering temperature profile and resistance to soldering heat test conditions are provided in the original datasheet.

Note: Packaging specifications for Reel and Tube are provided in the original datasheet.


2410121231_BLUE-ROCKET-BRCS055N10SHBD_C22449027.pdf

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