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quality NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKQ Suitable for Electronic Circuit Applications factory
quality NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKQ Suitable for Electronic Circuit Applications factory

NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKQ Suitable for Electronic Circuit Applications

Key Attributes
Model Number: 2SC4672U DKQ
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
2W
Transition Frequency(fT):
210MHz
Type:
NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC4672U DKQ
Package:
SOT-89
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor, designed for low-frequency applications, offers reliable performance with key electrical characteristics defined at 25C. It is suitable for various electronic circuits requiring precise current gain and breakdown voltage specifications. The transistor is housed in a SOT-89 package.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-89
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Value Unit Notes
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 60 V
Collector Emitter Voltage VCEO 50 V
Emitter Base Voltage VEBO 6 V
Collector Current - DC IC 3 A
Collector Current - Pulse ICP 6 A 1) Single pulse, PW = 10 ms.
Total Power Dissipation Ptot 0.5 W 2) When mounted on a 40 X 40 X 0.7 mm ceramic board.
Junction Temperature TJ 150 C
Storage Temperature Range TStg -55 to +150 C
Characteristics (at Ta = 25 C)
DC Current Gain at VCE = 2 V, IC = 0.5 A hFE 82 -
DC Current Gain at VCE = 2 V, IC = 1.5 A hFE 39 -
Collector Base Breakdown Voltage at IC = 50 A V(BR)CBO 60 V
Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 50 V
Emitter Base Breakdown Voltage at IE = 50 A V(BR)EBO 6 V
Collector Cutoff Current at VCB = 60 V ICBO 0.1 A
Emitter Cutoff Current at VEB = 5 V IEBO 0.1 A
Collector Emitter Saturation Voltage at IC = 1 A, IB = 50 mA VCE(sat) 0.35 V
Transition Frequency at VCE = 5 V, -IE = 0.5 A, f = 100 MHz fT 210 MHz
Output Capacitance at VCB = 10 V, f = 1 MHz Cob 25 pF
hFE Rank Classification
Rank Range Marking
P 82180 DKP
Q 120270 DKQ
R 180390 DKR

2410121642_CBI-2SC4672U-DKQ_C5362141.pdf

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