P Channel MOSFET BORN IRLML6401 with Maximum Gate Source Voltage of 8 Volts and Fast Switching Speed
Key Attributes
Model Number:
IRLML6401
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@2.5V,2.5A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
125pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
830pF@10V
Pd - Power Dissipation:
1.3W
Mfr. Part #:
IRLML6401
Package:
SOT-23-3L
Product Description
Product Overview
The IRLML6401 is a P-Channel MOSFET designed for fast switching applications. It features a High Density Cell Design for ultra-low on-resistance and is available in a SOT-23-3L package for surface mount applications. Key electrical characteristics include a drain-source voltage of -12V and a continuous drain current of -4.3A at 25 with VGS=4.5V. The device offers a maximum on-resistance of 50m at VGS = -4.5V and 85m at VGS = -2.5V.
Product Attributes
- Brand: IRLML6401
- Package Type: SOT-23-3L
- Origin: www.born-tw.com
- Revision: 2018
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings @TA=25 unless otherwise noted | ||||||
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | VGS=4.5V @ TA=25 | -4.3 | A | ||
| Pulsed Drain Current | IDM | -13 | A | |||
| Power Dissipation | PD | @ TA=25 | 1.3 | W | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 100 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Junction and Storage Temperature Range | Tstg | -55 | 150 | |||
| Electrical Characteristics @TA=25 unless otherwise noted | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -12 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -0.4 | -0.95 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-4.3A | 50 | m | ||
| VGS=-2.5V, ID=-2.5A | 85 | m | ||||
| VGS=-1.8V, ID=-2A | 125 | m | ||||
| Forward Transconductance | gFS | VDS=-10V, ID=-4.3A | 8.6 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-10V, f=1MHz | 830 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-10V, f=1MHz | 180 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-10V, f=1MHz | 125 | pF | ||
| Turn-On Delay Time | td(on) | ID=-1.0A, VDS=-6.0V, RGEN=6 | 11 | ns | ||
| Turn-Off Delay Time | td(off) | ID=-1.0A, VDS=-6.0V, RGEN=6 | 250 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-1.3A, dI/dt=-100A/s | 22 | 33 | ns | |
| Maximum Body-Diode Continuous Current | IS | 1.3 | A | |||
| Diode Forward Voltage | VSD | IS=-1.3A,VGS=0V | -1.2 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V | -1 | A | ||
| VDS=-9.6V, VGS=0V, TJ= 55 | -25 | A | ||||
| Package Information | ||||||
| Package Type | SOT-23-3L | |||||
| Ordering Information | ||||||
| Order Code | Package | Base Qty | Delivery Mode | Marking | ||
| IRLML6401 | SOT-23-3L | 3K | Tape and reel | 6401 | ||
2410121716_BORN-IRLML6401_C5148469.pdf
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