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quality high voltage PNP transistor CBI MMBTA92 encapsulated in SOT23 plastic package for electronic designs factory
quality high voltage PNP transistor CBI MMBTA92 encapsulated in SOT23 plastic package for electronic designs factory

high voltage PNP transistor CBI MMBTA92 encapsulated in SOT23 plastic package for electronic designs

Key Attributes
Model Number: MMBTA92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MMBTA92
Package:
SOT-23
Product Description

Product Overview

The MMBTA92 is a high-voltage PNP transistor encapsulated in a SOT-23 plastic package. It is designed for applications requiring high voltage handling capabilities.

Product Attributes

  • Type: Transistor (PNP)
  • Package: SOT-23 Plastic-Encapsulate
  • Marking: 2D

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) -300 V
Collector-Emitter Voltage VCEO (Ta=25 unless otherwise noted) -300 V
Emitter-Base Voltage VEBO (Ta=25 unless otherwise noted) -5 V
Collector Current - Continuous IC (Ta=25 unless otherwise noted) -200 mA
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 300 mW
Junction Temperature Tj (Ta=25 unless otherwise noted) 150
Storage Temperature Tstg (Ta=25 unless otherwise noted) -55 150
Thermal Resistance, junction to Ambient RJA (Ta=25 unless otherwise noted) 410 /mW
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -300 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE(1) VCE= -10V, IC= -1mA 60
DC current gain hFE(2) VCE= -10V, IC=-10mA 100 200
DC current gain hFE(3) VCE= -10V, IC=-30mA 60
Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V
Transition frequency fT VCE=-20V, IC= -10mA f=30MHz 50 MHz
Collector Current - Pulsed ICM (Ta=25 unless otherwise noted) -500 mA

Pinout:
1. BASE
2. EMITTER
3. COLLECTOR


2410121251_CBI-MMBTA92_C2828455.pdf

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