Electronic component CBI BC847AW NPN silicon epitaxial planar transistor for diverse circuit designs
Key Attributes
Model Number:
BC847AW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC847AW
Package:
SOT-323
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models with varying voltage and current ratings, making it suitable for diverse electronic circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: NPN Silicon Epitaxial Planar Transistor
Technical Specifications
| Parameter | Symbol | BC846W | BC847W | BC848W | BC849W | BC850W | Unit |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||||
| Collector Base Voltage | VCBO | 80 | 50 | 30 | 30 | 50 | V |
| Collector Emitter Voltage | VCEO | 65 | 45 | 30 | 30 | 45 | V |
| Emitter Base Voltage | VEBO | 6 | 6 | 5 | 5 | 5 | V |
| Collector Current | IC | 100 | mA | ||||
| Peak Collector Current | ICM | 200 | mA | ||||
| Total Power Dissipation | Ptot | 200 | mW | ||||
| Junction Temperature | Tj | 150 | C | ||||
| Storage Temperature Range | Tstg | -55 to +150 | C | ||||
| Characteristics (Ta = 25 C) | |||||||
| DC Current Gain at VCE = 5 V, IC = 2 mA | hFE | 110-220 | 200-450 | 420-800 | - | - | - |
| hFE | - | - | - | - | - | - | |
| hFE | - | - | - | - | - | - | |
| Collector Base Voltage at IC = 10 A | VCBO | 80 | 50 | 30 | 30 | 50 | V |
| Collector Emitter Voltage at IC = 10 mA | VCEO | 65 | 45 | 30 | 30 | 45 | V |
| Emitter Base Voltage at IE = 1 A | VEBO | 6 | 6 | 5 | 5 | 5 | V |
| Collector Base Cutoff Current at VCB = 30 V | ICBO | -15 | nA | ||||
| Emitter Base Cutoff Current at VEB = 5 V | IEBO | -100 | nA | ||||
| Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA | VCE(sat) | -0.25 | V | ||||
| IC = 100 mA, IB = 5 mA | VCE(sat) | -0.6 | V | ||||
| Base Emitter Voltage at VCE = 5 V, IC = 2 mA | VBE | 0.58 - 0.7 | V | ||||
| VCE = 5 V, IC = 10 mA | VBE | - 0.77 | V | ||||
| Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz | fT | 100 | MHz | ||||
| Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz | Cob | -4.5 | pF | ||||
2410121531_CBI-BC847AW_C2919778.pdf
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