Dual PNP Transistor SOT363 Package Featuring CBI BC857DW Ideal for Compact Electronic Circuits
Key Attributes
Model Number:
BC857DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC857DW
Package:
SOT-363
Product Description
Product Overview
This product features two PNP transistors integrated into a single SOT-363 package. This dual transistor design offers advantages such as reducing component count and saving board space, with no mutual interference between the transistors. It is suitable for applications requiring PNP transistor functionality in a compact form factor.
Product Attributes
- Package Type: SOT-363
- Transistor Type: PNP + PNP (Dual Transistor)
- Marking: 3F
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | Ic=-10A,IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic=-10mA,IB=0 | -45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-30V,IE=0 | -15 | nA | ||
| DC current gain | hFE | VCE=-5V,IC=-2mA | 125 | 630 | ||
| Collector-emitter saturation voltage | VCE(sat)(1) | IC=-10mA,IB=-0.5mA | -0.3 | V | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | IC=-100mA,IB=-5mA | -0.65 | V | ||
| Base-emitter voltage | VBE(1) | VCE=-5V,IC=-2mA | -0.6 | -0.75 | V | |
| Base-emitter voltage | VBE(2) | VCE=-5V,IC=-10mA | -0.82 | V | ||
| Transition frequency | fT | VCE=-5V,IC=-10mA,f=100MHz | 200 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 3.5 | pF | ||
| Noise figure | NF | VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz | 2.5 | dB |
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| VCBO | Collector- Base Voltage | -50 | V |
| VCEO | Collector-Emitter Voltage | -45 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector Current -Continuous | -0.2 | A |
| PC | Collector Power Dissipation | 0.3 | W |
| RJA | Thermal Resistance from Junction to Ambient | 417 | /W |
| TJ | Junction Temperature | 150 | |
| Tstg | Storage Temperature | -55-150 |
2410121713_CBI-BC857DW_C2836077.pdf
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