Electronic Component CBI S9012W PNP Transistor Featuring Excellent hFE Linearity and SOT323 Package

Key Attributes
Model Number: S9012W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S9012W
Package:
SOT-323
Product Description

Product Overview

The S9012W is a PNP transistor designed with excellent hFE linearity, making it a complementary component to the S9013T. This transistor is suitable for various electronic applications requiring reliable performance.

Product Attributes

  • Device Type: Transistor (PNP)
  • Package: SOT-323
  • Marking: 2T1

Technical Specifications

Symbol Parameter Test Conditions MIN TYP MAX Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current - Continuous -500 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55 150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC= -100A, IE=0 -40 V
V(BR)CEO Collector-emitter breakdown voltage IC= -1mA, IB=0 -25 V
V(BR)EBO Emitter-base breakdown voltage IE=-100A, IC=0 -5 V
ICBO Collector cut-off current VCB=-40V, IE=0 -0.1 A
ICEO Collector cut-off current VCE=-20V, IB=0 -0.1 A
IEBO Emitter cut-off current VEB= -5V, IC=0 -0.1 A
hFE DC current gain VCE=-1V, IC= -50mA 120 400
VCE(sat) Collector-emitter saturation voltage IC=-500mA, IB= -50mA -0.6 V
VBE(sat) Base-emitter saturation voltage IC=-500mA, IB= -50mA -1.2 V
fT Transition frequency VCE=-6V, IC= -20mA, f=30MHz 150 MHz
Cob Collector output capacitance VCB=-10V, IE=0, f=1MHz 5 pF

2409302301_CBI-S9012W_C2919787.pdf

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