Low Loss Schottky Diode CBI BAT64-04 Plastic Encapsulated Device Suitable for Fast Recovery Circuits
Key Attributes
Model Number:
BAT64-04
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
800mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - Forward(Vf@If):
750mV@100mA
Current - Rectified:
250mA
Mfr. Part #:
BAT64-04
Package:
SOT-23
Product Description
Product Overview
The BAT64 series Schottky barrier diodes are designed for low-loss, fast-recovery applications, offering integrated diffused guard rings for enhanced reliability. They are suitable for meter protection, bias isolation, and clamping applications, featuring a low forward voltage for efficient operation.
Product Attributes
- Marking: 66S (BAT64-06), 65S (BAT64-05), 64S (BAT64-04)
- Encapsulation: Plastic-Encapsulate Diodes
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | BAT64-06 | BAT64-05 | BAT64-04 | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Maximum Ratings @Ta=25 | ||||||
| Peak reverse voltage | VRM | 40 | V | |||
| Non-repetitive Peak forward surge current | IFSM | 0.8 | A | @t=8.3ms | ||
| Forward current | IF | 0.25 | A | |||
| Power Dissipation | PD | 250 | mW | |||
| Thermal Resistance JunctiontoAmbient | RJA | 400 | /W | |||
| Operating Junction Temperature Range | Tj | -40 ~ +125 | ||||
| Storage Temperature Range | Tstg | -55 ~ +150 | ||||
| Electrical Ratings @Ta=25 | ||||||
| Reverse breakdown voltage | VR | 40 | V | IR=10A | ||
| Forward voltage | VF | 350 | mV | IF=1mA | ||
| 430 | IF=10mA | |||||
| 520 | IF=30mA | |||||
| 750 | IF=100mA | |||||
| Reverse current | IR | 2 | A | VR=25V | ||
| Capacitance between terminals | CT | 6 | pF | VR=1V,f=1MHz | ||
2509011105_CBI-BAT64-04_C51315115.pdf
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