SOT363 Package Plastic Encapsulated Dual NPN Transistor CBI BC847DW Component for Electronics Design
Key Attributes
Model Number:
BC847DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC847DW
Package:
SOT-363
Product Description
Product Overview
This product is a dual transistor housed in a SOT-363 plastic-encapsulated package. It integrates two NPN transistors into a single component, offering advantages such as reduced component count and minimized board space. The design ensures no mutual interference between the internal transistors, making it suitable for various electronic applications.
Product Attributes
- Package Type: SOT-363
- Transistor Type: Dual Transistor (NPN+NPN)
- Encapsulation: Plastic
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current Continuous | IC | 0.1 | A | |||
| Collector Dissipation | PC | (Ta=25) | 200 | mW | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA,IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=30V,IE=0 | 15 | nA | ||
| Emitter cut-off current | IEBO | IC=0, VEB=5V | 5 | A | ||
| DC current gain | hFE | VCE=5V,IC=2mA | 110 | 200 | 450 | |
| Collector-emitter saturation voltage | VCE(sat)(1) | IC=10mA,IB=0.5mA | 0.1 | V | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | IC=100mA,IB=5mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=10mA,IB=0.5mA | 0.77 | V | ||
| Transition frequency | fT | VCB=5V,IE=10mA,f=100MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 1.5 | pF |
| Model | Group | hFE Min | hFE Typ | hFE Max |
|---|---|---|---|---|
| BC847A | A | 120 | ||
| BC847B | B | 200 | ||
| BC847C | C | 420 | ||
| BC847DW |
2409291004_CBI-BC847DW_C2836076.pdf
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