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quality Electronic transistor CBI 2SB806 with plastic encapsulation and high collector emitter voltage rating factory
quality Electronic transistor CBI 2SB806 with plastic encapsulation and high collector emitter voltage rating factory

Electronic transistor CBI 2SB806 with plastic encapsulation and high collector emitter voltage rating

Key Attributes
Model Number: 2SB806
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
2W
Transition Frequency(fT):
75MHz
Current - Collector(Ic):
700mA
Collector - Emitter Voltage VCEO:
120V
Mfr. Part #:
2SB806
Package:
SOT-89-3L
Product Description

Product Overview

This is a plastic-encapsulated transistor designed for various electronic applications. It features a high collector-to-emitter voltage (VCEO) of -120V. The device is available in different DC current gain (hFE) classifications, including KR (90-180), KQ (135-270), and KP (200-400), allowing for selection based on specific gain requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-89-3L
  • Encapsulation: Plastic

Technical Specifications

Parameter Symbol Rating Unit
Absolute Maximum Ratings (Ta = 25C)
Collector-base voltage VCBO -120 V
Collector-emitter voltage VCEO -120 V
Emitter-base voltage VEBO -5 V
Collector current IC -0.7 A
Collector current (pulse) *1 IC(pu) -1.2 A
Collector power dissipation Pc 2 W
Junction temperature Tj 150 C
Storage temperature Tstg -55 to +150 C
*1. PW 10ms, duty cycle 50%
Electrical Characteristics (Ta = 25C)
Collector cutoff current ICBO VCB = -120V, IE=0 -100 nA
Emitter cutoff current IEBO VEB = -5V, IC=0 -100 nA
DC current gain * hFE VCE =-1V , IC = -100mA 90 - 200 (KR) / 135 - 270 (KQ) / 200 - 400 (KP)
VCE =-1V , IC = -5.0mA 45 - 200
Collector-emitter saturation voltage * VCE(sat) IC = -500mA , IB = -50mA -0.4 -0.6 V
Base-emitter saturation voltage * VBE(sat) IC = -500mA , IB = -50mA -0.9 -1.5 V
Base-emitter voltage * VBE VCE =-10V , IC = -10mA -550 -620 -650 mV
Output capacitance Cob VCB = -10V , IE = 0 , f = 1.0MHz 14 pF
Transition frequency fT VCE = -10V , IE = 10mA 75 MHz
* PW 350s, duty cycle 2%
SOT-89 PACKAGE OUTLINE (Dimensions in Millimeters)
Symbol Dimension Min Max
A 1.40 1.60
B 2.95 3.05
b1 1.45 1.70
b2 0.45 0.56
b3 0.35 0.50
C 0.35 0.50
D 4.40 4.60
E 2.35 2.55
HE 3.90 4.40
Lp 0.90 1.10

2410121717_CBI-2SB806_C5362121.pdf

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