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quality PNP Transistor SOT523 Package Featuring CBI S8550 Suitable for Electronic Circuit Applications factory
quality PNP Transistor SOT523 Package Featuring CBI S8550 Suitable for Electronic Circuit Applications factory

PNP Transistor SOT523 Package Featuring CBI S8550 Suitable for Electronic Circuit Applications

Key Attributes
Model Number: S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8550
Package:
SOT-23-3L
Product Description

Product Overview

The S8550T is a PNP bipolar junction transistor (BJT) designed as a complementary component to the S8050T. It features a continuous collector current (IC) of 0.5A and is suitable for various electronic applications. The transistor is marked with '2TY' and is available in a SOT-523 package with clearly defined Base, Emitter, and Collector pins.

Product Attributes

  • Type: PNP Transistor
  • Marking: 2TY
  • Package: SOT-523
  • Complementary to: S8050T

Technical Specifications

Parameter Symbol Test Conditions Value Units
Maximum Ratings (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -0.5 A
Collector Power Dissipation PC 0.2 W
Junction Temperature Tj 150
Storage Temperature Tstg -55-150
Electrical Characteristics (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC = -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 A
DC current gain (hFE(1)) hFE(1) VCE= -1V, IC= -50mA 120 - 400
DC current gain (hFE(2)) hFE(2) VCE= -1V, IC= -500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
Transition frequency fT VCE= -6V, IC= -20mA, f=30MHz 150 MHz

hFE(1) Classification

Rank Range
L 120-200
H 200-350
J 300-400

2410311341_CBI-S8550_C5366652.pdf

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