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quality High reliability transistor CBI MMBT5551T for medium power amplification and switching applications factory
quality High reliability transistor CBI MMBT5551T for medium power amplification and switching applications factory

High reliability transistor CBI MMBT5551T for medium power amplification and switching applications

Key Attributes
Model Number: MMBT5551T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
MMBT5551T
Package:
SOT-523
Product Description

Product Overview

The MMBT5551T is a complementary NPN transistor designed for medium power amplification and switching applications. It offers excellent performance characteristics, making it an ideal choice for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

  • MARKING: G1

Technical Specifications

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB= 120V, IE=0 50 nA
Emitter cut-off current IEBO VEB=4V, IC=0 50 nA
DC current gain hFE1* VCE=5V, IC=1mA 80
DC current gain hFE2* VCE=5V, IC =10mA 100 300
DC current gain hFE3* VCE=5V, IC=50mA 50
Collector-emitter saturation voltage VCEsat* IC=10mA, IB=1mA 0.15 V
Collector-emitter saturation voltage VCEsat* IC=50mA, IB=5mA 0.2 V
Base-emitter saturation voltage VBEsat* IC=10mA, IB= 1mA 1 V
Base-emitter saturation voltage VBEsat* IC=50mA, IB= 5mA 1 V
Transition frequency fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
Input capacitance Cib VBE=0.5V, IC=0, f=1MHz 20 pF
Noise figure NF VCE=5V, Ic=0.25mA, f=10Hz to 15.7KHz, Rs=1k 8 dB
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 0.6 A
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 150

2409302301_CBI-MMBT5551T_C2836078.pdf

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