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quality NPN Silicon Epitaxial Transistor CBI BC847BT for Switching Amplifier Applications SOT523 Package factory
quality NPN Silicon Epitaxial Transistor CBI BC847BT for Switching Amplifier Applications SOT523 Package factory

NPN Silicon Epitaxial Transistor CBI BC847BT for Switching Amplifier Applications SOT523 Package

Key Attributes
Model Number: BC847BT
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC847BT
Package:
SOT-523
Product Description

Product Overview

This NPN Silicon Epitaxial Transistor is designed for switching and amplifier applications. It offers a range of models with varying collector-emitter voltage ratings, DC current gain, and transition frequencies, making it suitable for diverse electronic circuits. The transistors are available in a plastic surface-mounted SOT-523 package.

Product Attributes

  • Brand/Manufacturer: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-523
  • Transistor Type: NPN Silicon Epitaxial Transistor
  • Application: Switching and amplifier applications

Technical Specifications

Parameter Symbol BC846T BC847T, BC850T BC848T, BC849T Unit
Collector Base Voltage VCBO 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 6.5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Power Dissipation Ptot 150 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -65 to +150 C
Characteristics at Ta = 25 C Symbol Min. Typ. Max. Unit
DC Current Gain (VCE = 5 V, IC =2 mA) - Group A hFE 110 200 - -
DC Current Gain (VCE = 5 V, IC =2 mA) - Group B hFE - 220 450 -
DC Current Gain (VCE = 5 V, IC =2 mA) - Group C hFE - 420 800 -
Collector Base Cutoff Current (VCB = 30 V) ICBO - - 15 nA
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) - - 250 mV
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5 mA) VCE(sat) - - 600 mV
Base Emitter On Voltage (VCE = 5 V, IC = 2 mA) VBE(on) 580 - - mV
Base Emitter On Voltage (VCE = 5 V, IC = 10 mA) VBE(on) - 700 720 mV
Transition Frequency (VCE = 5 V, IC = 10 mA, f = 100 MHz) fT - 300 - MHz
Output Capacitance (VCB = 10 V, f = 1 MHz) Cob - - 6 p F

MARKING CODE

TYPE MARKING TYPE MARKING
846AT 1A 849AT 2A
846BT 1B 849BT 2B
846CT 1C 849CT 2C
847AT 1E 850AT 2E
847BT 1F 850BT 2F
847CT 1G 850CT 2G
848AT 1J
848BT 1K
848CT 1L
Symbol Dimension in Millimeters Min Max
A 0.60 0.80
A1 0.010 0.100
B 0.95 1.05
bp 0.26 0.40
bq 0.16 0.30
C 0.09 0.15
D 1.50 1.70
E 0.70 0.85
HE 1.45 1.75
Lp 0.16 0.36
0 5

2410121928_CBI-BC847BT_C21714156.pdf

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