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quality High reliability dual npn transistor CBI BC846B designed for integrated circuit board applications factory
quality High reliability dual npn transistor CBI BC846B designed for integrated circuit board applications factory

High reliability dual npn transistor CBI BC846B designed for integrated circuit board applications

Key Attributes
Model Number: BC846B
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BC846B
Package:
SOT-23
Product Description

Product Overview

The SOT-23-6L is a dual NPN transistor package designed to reduce component count and board space. It features two independent transistors within a single package, ensuring no mutual interference. This component is ideal for applications requiring compact and efficient transistor solutions.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23-6L
  • Encapsulation: Plastic
  • Transistor Type: Dual Transistor (NPN+NPN)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MARKING
BC846AF 4A t
BC846BF 4B t
BC846CF 4G t
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 65 V
Emitter-Base Voltage VEBO 6 V
Collector Current Continuous IC 0.1 A
Collector Dissipation PC 200 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 65 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=70V, IE=0 100 nA
Emitter cut-off current IEBO IC=0, VEB=5V 100 nA
DC current gain hFE VCE=5V, IC=2mA 110 200 420
220 450 800
Collector-emitter saturation voltage VCE(sat)(1) IC=10mA, IB=0.5mA 0.25 V
VCE(sat)(2) IC=100mA, IB=5mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5mA 1.1 V
Transition frequency fT VCB=5V, IE=10mA, f=100MHz 100 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 1.5 pF

2508261745_CBI-BC846B_C5366414.pdf

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