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quality High Voltage NPN Silicon Transistor CBI MMBT13001 in SOT23 Package for Amplification and Switching factory
quality High Voltage NPN Silicon Transistor CBI MMBT13001 in SOT23 Package for Amplification and Switching factory

High Voltage NPN Silicon Transistor CBI MMBT13001 in SOT23 Package for Amplification and Switching

Key Attributes
Model Number: MMBT13001
Product Custom Attributes
Current - Collector Cutoff:
100uA
Emitter-Base Voltage(Vebo):
10V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
5MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
420V
Mfr. Part #:
MMBT13001
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for general-purpose applications. It features a SOT-23 plastic package, making it suitable for surface mounting. The transistor offers robust performance with high breakdown voltages and controlled current gain, ideal for switching and amplification circuits in various electronic devices.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-23 Plastic Package
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Value Unit Conditions
Collector Base Voltage VCBO 700 V
Collector Emitter Voltage VCEO 420 V
Emitter Base Voltage VEBO 10 V
Collector Current IC 150 mA
Power Dissipation Ptot 300 mW (Ta = 25 C)
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
DC Current Gain hFE 15 - VCE = 20 V, IC = 10 mA
DC Current Gain hFE 25 - VCE = 20 V, IC = 10 mA
Collector Base Cutoff Current ICBO - 100 A VCB = 700 V
Collector Emitter Cutoff Current ICEO - 100 A VCE = 420 V
Emitter Base Cutoff Current IEBO - 100 A VEB = 10 V
Collector Base Breakdown Voltage V(BR)CBO 700 V IC = 100 A
Collector Emitter Breakdown Voltage V(BR)CEO 420 V IC = 1 mA
Emitter Base Breakdown Voltage V(BR)EBO 10 V IE = 100 A
Collector Emitter Saturation Voltage VCE(sat) - 1.05 V IC = 50 mA, IB = 10 mA
Base Emitter Saturation Voltage VBE(sat) - 1.55 V IC = 50 mA, IB = 10 mA
Transition Frequency fT 5 MHz VCE = 10 V, IC = 50 mA, f = 1 MHz
Storage Time ts - 3 s UI9600, IC = 100 mA
Rise Time tr - 1 s UI9600, IC = 100 mA
Fall Time tf - 1 s UI9600, IC = 100 mA

2410121513_CBI-MMBT13001_C21714190.pdf

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