Dual Bias Resistor Transistor CBI MMUN5235DW NPN Silicon Surface Mount Device with Monolithic Resistor Network

Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors are NPN silicon surface mount transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and simplifying circuit design. Designed for low power surface mount applications where board space is limited, the MMUN5211DW series offers reduced component count and board space utilization. The product material complies with RoHS requirements.

Product Attributes

• Brand: Heyuan China Base Electronics Technology Co., Ltd.
• Origin: China
• Material Compliance: RoHS
• Package Type: SOT-363

Technical Specifications

Model	Package	Marking	R1 (K)	R2 (K)	Shipping
MMUN5211DW	SOT-363	7A	10	10	3000/Tape&Reel
MMUN5214DW	SOT-363	7D	10	47	3000/Tape&Reel
MMUN5215DW	SOT-363	7E	10	-	3000/Tape&Reel
MMUN5216DW	SOT-363	7F	4.7	-	3000/Tape&Reel
MMUN5230DW	SOT-363	7G	1	1	3000/Tape&Reel
MMUN5231DW	SOT-363	7H	2.2	2.2	3000/Tape&Reel
MMUN5232DW	SOT-363	7J	4.7	4.7	3000/Tape&Reel
MMUN5233DW	SOT-363	7K	4.7	47	3000/Tape&Reel
MMUN5234DW	SOT-363	7L	22	47	3000/Tape&Reel
MMUN5235DW	SOT-363	7M	2.2	47	3000/Tape&Reel
MMUN5238DW	SOT-363	7Q	2.2	-	3000/Tape&Reel
MMUN5241DW	SOT-363	7T	100	-	3000/Tape&Reel
MMUN5212DW	SOT-363	7B	22	22	3000/Tape&Reel
MMUN5213DW	SOT-363	7C	47	47	3000/Tape&Reel

Characteristic	Symbol	Value	Unit	Notes
Collector-Base Voltage	VCBO	50	Vdc
Collector-Emitter Voltage	VCEO	50	Vdc
Collector Current	IC	100	mAdc
Total Device Dissipation (One Junction Heated)	PD	187	mW	TA= 25C, Note 1
Total Device Dissipation (Both Junctions Heated)	PD	250	mW	TA= 25C, Note 1
Junction-to-Ambient Thermal Resistance (One Junction Heated)	RJA	670	C/W	Note 1
Junction-to-Ambient Thermal Resistance (Both Junctions Heated)	RJA	493	C/W	Note 1
Junction-to-Lead Thermal Resistance	RJL	188	C/W	Note 1
Junction and Storage Temperature	TJ, Tstg	55 to +150	C
Collector Base Cutoff Current	ICBO	-100	nA	VCB = 50 V
Collector Emitter Cutoff Current	ICEO	-500	nA	VCE = 50 V
Collector Base Breakdown Voltage	V(BR)CBO	50	V	IC = 10 A
Collector Emitter Breakdown Voltage	V(BR)CEO	50	V	IC = 2 mA
Collector Emitter Saturation Voltage (IC=10mA, IB=0.3mA)	VCEsat	0.25	V	MMUN5230DW, MMUN5231DW
Collector Emitter Saturation Voltage (IC=10mA, IB=5mA)	VCEsat	0.25	V	MMUN5215DW, MMUN5216DW, MMUN5232DW, MMUN5233DW, MMUN5234DW, MMUN5235DW, MMUN5238DW
Output Voltage (on) (VCC=5V, VB=2.5V, RL=1K)	VOL	0.2	V	MMUN5211DW, MMUN5212DW, MMUN5214DW, MMUN5215DW, MMUN5216DW, MMUN5230DW, MMUN5231DW, MMUN5232DW, MMUN5233DW, MMUN5234DW, MMUN5235DW, MMUN5238DW
Output Voltage (on) (VCC=5V, VB=3.5V, RL=1K)	VOL	0.2	V	MMUN5213DW
Output Voltage (on) (VCC=5V, VB=5V, RL=1K)	VOL	0.2	V	MMUN5241DW
Output Voltage (off) (VCC=5V, VB=0.5V, RL=1K)	VOH	4.9	V	MMUN5211DW, MMUN5212DW, MMUN5214DW, MMUN5215DW, MMUN5216DW, MMUN5230DW, MMUN5231DW, MMUN5232DW, MMUN5233DW, MMUN5234DW, MMUN5235DW, MMUN5238DW
Output Voltage (off) (VCC=5V, VB=0.05V, RL=1K)	VOH	4.9	V	MMUN5230DW
Output Voltage (off) (VCC=5V, VB=0.25V, RL=1K)	VOH	4.9	V	MMUN5215DW, MMUN5216DW, MMUN5233DW, MMUN5238DW

Model	Input Resistor R1	Unit	Resistor Ratio R1/R2	Unit
MMUN5211DW	7	K	0.8
MMUN5212DW	22	K	0.8
MMUN5213DW	47	K	0.17
MMUN5214DW	10	K	0.17
MMUN5215DW	10	K	-
MMUN5216DW	4.7	K	-
MMUN5230DW	1	K	0.8
MMUN5231DW	2.2	K	0.055
MMUN5232DW	4.7	K	0.38
MMUN5233DW	4.7	K	0.055
MMUN5234DW	22	K	0.38
MMUN5235DW	2.2	K	0.38
MMUN5238DW	2.2	K	-
MMUN5241DW	100	K	-

Notes:

• 1. FR-4 @ Minimum Pad
• 2. FR-4 @ 1.0 x 1.0 inch Pad

2410121707_CBI-MMUN5235DW_C21714287.pdf