Plastic Encapsulated Transistor CBI 2N5401U Suitable for High Voltage Switching Applications
Key Attributes
Model Number:
2N5401U
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
150V
Mfr. Part #:
2N5401U
Package:
SOT-89
Product Description
Product Overview
The Plastic-Encapsulate Transistor (PNP) is designed for switching and amplification in high-voltage applications, particularly within telephony systems. It offers low current capabilities with a maximum of 500mA and high voltage handling up to 160V. Key features include its suitability for high-voltage scenarios and its low current characteristics.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-89
Technical Specifications
| Symbol | Parameter | Test Conditions | Value | Unit |
|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||
| VCBO | Collector-Base Voltage | -160 | V | |
| VCEO | Collector-Emitter Voltage | -150 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current - Continuous | -0.5 | A | |
| PC | Collector Power Dissipation | 0.5 | W | |
| TJ | Junction Temperature | 150 | ||
| Tstg | Storage Temperature | -55~150 | ||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||
| V(BR)CBO | Collector-base breakdown voltage | IC= -100A, IE=0 | -160 | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -1mA, IB=0 | -150 | V |
| V(BR)EBO | Emitter-base breakdown voltage | IE = -10A, IC=0 | -5 | V |
| ICBO | Collector cut-off current | VCB = -120 V, IE=0 | -50 | nA |
| IEBO | Emitter cut-off current | VEB= -3V, IC=0 | -50 | nA |
| hFE | DC current gain | VCE= -5V, IC=- 1 mA | 50 | |
| VCE= -5V, IC= -10 mA | 60 | |||
| VCE= -5V, IC=-50 mA | 50 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC= -10 mA, IB= -1 mA | -0.2 | V |
| IC= -50 mA, IB= -5 mA | -0.5 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC= -10 mA, IB= -1 mA | -1 | V |
| IC= -50 mA, IB= -5 mA | -1 | V | ||
| fT | Transition frequency | VCE= -10V, IC= -10mA, f = 100MHz | 100~300 | MHz |
| Cob | Output Capacitance | VCB=-10V, IE= 0,f=1MHz | 6 | pF |
| NF | Noise Figure | VCE= -5.0V, IC= -200A, RS= 10,f =10Hz to15.7kHz | 8 | dB |
| RJA | Thermal Resistance From Junction To Ambient | 250 | /W | |
2409272232_CBI-2N5401U_C2836112.pdf
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