Silicon Epitaxial Planar Diode CBI BAS20W High Voltage Switching Diodes for General Purpose Circuits
Key Attributes
Model Number:
BAS20W
Product Custom Attributes
Mfr. Part #:
BAS20W
Package:
SOT-323
Product Description
Product Overview
This product line consists of High Voltage Switching Diodes designed for various electronic applications. These silicon epitaxial planar diodes offer reliable performance with specified voltage and current ratings, making them suitable for general-purpose switching applications. The series includes multiple models with distinct reverse voltage capabilities.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package: SOT-323 Plastic Package
- Material: Silicon Epitaxial Planar
- Type: Diodes
Technical Specifications
| Parameter | Symbol | BAS19W | BAS20W | BAS21W | BAS21AW | BAS21CW | BAS21SW | Unit |
|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25) | ||||||||
| Reverse Voltage | VR | 120 | 200 | 250 | V | |||
| Continuous Forward Current | IF(AV) | 200 | mA | |||||
| Repetitive Peak Forward Current | IFRM | 625 | mA | |||||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 0.5 | A | |||||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 2.5 | A | |||||
| Total Device Dissipation | Ptot | 250 | mW | |||||
| Thermal Resistance Junction to Ambient | RJA | 357 | /W | |||||
| Junction and Storage Temperature Range | Tj, Tstg | -55 to +150 | ||||||
| Characteristics at Ta = 25 | ||||||||
| Reverse Breakdown Voltage (at IR = 100 A) | V(BR)R | 120 | 200 | 250 | V | |||
| Forward Voltage (at IF = 100 mA) | VF | - | V | |||||
| Forward Voltage (at IF = 200 mA) | VF | 1.25 | V | |||||
| Reverse Current (at VR = 100 V) | IR | - | - | - | 0.1 | 0.1 | 0.1 | A |
| Reverse Current (at VR = 150 V) | IR | - | - | - | 100 | 100 | 100 | A |
| Reverse Current (at VR = 200 V) | IR | - | - | - | A | |||
| Reverse Current (at VR = 100 V, Tj = 150) | IR | - | - | - | A | |||
| Reverse Current (at VR = 150 V, Tj = 150) | IR | - | - | - | A | |||
| Reverse Current (at VR = 200 V, Tj = 150) | IR | - | - | - | A | |||
| Total Capacitance (at VR = 0, f = 1 MHz) | Ctot | 5 | pF | |||||
| Reverse Recovery Time (at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 ) | trr | 1 | 3 | 2 | 1 | 3 | 2 | ns |
| Marking Code | T3 | T3 | T3 | F2 | F3 | F4 | ||
2509181520_CBI-BAS20W_C51814152.pdf
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