Extremely Fast Switching Schottky Diode in SOT23 Package CBI BAT54S Ideal for Switching Applications
Key Attributes
Model Number:
BAT54S
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA@25V
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54S
Package:
SOT-23
Product Description
Product Overview
The BAT54 series features extremely fast switching speed Schottky diodes in a plastic surface-mounted SOT-23 package. These diodes are designed for applications requiring rapid switching characteristics.
Product Attributes
- Package Type: SOT-23
- Diode Type: Schottky
- Switching Speed: Extremely Fast
Technical Specifications
| Parameter | Symbol | Limits/Conditions | Unit |
|---|---|---|---|
| Maximum Ratings @ TA=25 | |||
| Peak Repetitive Working Peak Reverse Voltage | VRRM, VRWM, VR | 30 | V |
| Forward Continuous Current | IFM | 200 | mA |
| Power Dissipation | PD | 200 | mW |
| Storage Temperature | TSTG | -55 to 150 | |
| Electrical Characteristics @ TA=25 | |||
| Reverse Breakdown Voltage | V(BR)R | Min. 30 (at IR=100A) | V |
| Forward Voltage | VF1 | Typ. 0.24 (at IF=0.1mA) | V |
| Forward Voltage | VF2 | Typ. 0.32 (at IF=1mA) | V |
| Forward Voltage | VF3 | Typ. 0.40 (at IF=10mA) | V |
| Forward Voltage | VF4 | Typ. 0.50 (at IF=30mA) | V |
| Forward Voltage | VF5 | Typ. 1 (at IF=100mA) | V |
| Reverse Current | IR | Max. 2 (at VR=25V) | A |
| Diode Capacitance | CD | Typ. 10 (at VR=1V, f=1MHz) | pF |
| Reverse Recovery Time | trr | Max. 5 (at IF=IR=10mA, Irr=0.1xIR, RL=100) | nS |
| Model | Marking |
|---|---|
| BAT54 | KL1 |
| BAT54A | KL2 |
| BAT54C | KL3 |
| BAT54S | KL4 |
2410121218_CBI-BAT54S_C2828465.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
