Switching diode CBI BAW56 featuring low forward voltage and small package ideal for high speed electronic
Key Attributes
Model Number:
BAW56
Product Custom Attributes
Reverse Leakage Current (Ir):
50uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Diode Configuration:
1 Pair Common Anode
Voltage - DC Reverse (Vr) (Max):
85V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAW56
Package:
SOT-23
Product Description
Product Overview
The BAW56 is a silicon epitaxial planar switching diode designed for ultra-high speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for demanding switching scenarios.
Product Attributes
- Package Type: SOT-23 Plastic Package
- Marking Code: A1
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Peak Repetitive Reverse Voltage | VRRM | 85 | V | (Ta = 25 C) |
| Continuous Reverse Voltage | VR | 75 | V | (Ta = 25 C) |
| Forward Current (DC) - Single Diode Loaded | IF | 215 | mA | (Ta = 25 C) |
| Forward Current (DC) - Double Diode Loaded | IF | 125 | mA | (Ta = 25 C) |
| Repetitive Peak Forward Current | IFRM | 450 | mA | (Ta = 25 C) |
| Non-repetitive Peak Forward Surge Current (t = 1 s) | IFSM | 0.5 | A | (Ta = 25 C) |
| Non-repetitive Peak Forward Surge Current (t = 1 ms) | IFSM | 1 | A | (Ta = 25 C) |
| Non-repetitive Peak Forward Surge Current (t = 1 s) | IFSM | 4 | A | (Ta = 25 C) |
| Power Dissipation | Ptot | 350 | mW | (Ta = 25 C) |
| Operating Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -65 to +150 | C | |
| Characteristics | ||||
| Forward Voltage | VF | 715 | mV | IF = 1 mA, (Ta = 25 C) |
| Forward Voltage | VF | 855 | mV | IF = 10 mA, (Ta = 25 C) |
| Forward Voltage | VF | 1 | V | IF = 50 mA, (Ta = 25 C) |
| Forward Voltage | VF | 1.25 | V | IF = 150 mA, (Ta = 25 C) |
| Reverse Current | IR | 30 | nA | VR = 25 V, (Ta = 25 C) |
| Reverse Current | IR | 1 | A | VR = 75 V, (Ta = 25 C) |
| Reverse Current | IR | 30 | A | VR = 25 V, TJ = 150 C |
| Reverse Current | IR | 50 | A | VR = 75 V, TJ = 150 C |
| Diode Capacitance | Cd | 2 | pF | VR = 0 V, f = 1 MHz, (Ta = 25 C) |
| Reverse Recovery Time | trr | 4 | ns | IF = 10 mA, IR = 10 mA, RL = 100 , (Ta = 25 C) |
2410121246_CBI-BAW56_C2828462.pdf
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