Surface Mount Schottky Diode CBI 1N5819W 1A Rectifier in SOD123 Package for Power Supply Applications
Key Attributes
Model Number:
1N5819W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA@40V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
900mV@3A
Current - Rectified:
1A
Mfr. Part #:
1N5819W
Package:
SOD-123
Product Description
Product Overview
The 1N5817W-1N5819W series is a range of 1A surface mount Schottky barrier diodes designed for efficient rectification. These diodes offer low forward voltage drop and are suitable for various power supply and switching applications. They are packaged in a compact SOD-123 outline for space-constrained designs.
Product Attributes
- Package Type: SOD-123
- Mounting Type: Surface Mount
Technical Specifications
| Parameter | Symbol | 1N5817W | 1N5818W | 1N5819W | Unit |
|---|---|---|---|---|---|
| Reverse Breakdown Voltage (at IR = 1 mA) | 20 | 30 | 40 | V | |
| Reverse Current (at VR = 20 V) | 1 | - | - | mA | |
| Reverse Current (at VR = 30 V) | - | 1 | - | mA | |
| Reverse Current (at VR = 40 V) | - | - | 1 | mA | |
| Reverse Current (at VR = 4 V) | - | - | 0.05 | mA | |
| Reverse Current (at VR = 6 V) | - | - | 0.075 | mA | |
| Forward Voltage (at IF = 0.1 A) | - | - | 0.45 | V | |
| Forward Voltage (at IF = 1 A) | 0.45 | 0.55 | 0.6 | V | |
| Forward Voltage (at IF = 3 A) | 0.75 | 0.875 | 0.9 | V | |
| Total Capacitance (at VR = 4 V, f = 1 MHz) | 120 | 120 | 120 | pF | |
| Average Forward Rectified Current | IF(AV) | 1 | A | ||
| Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) | IFSM | 9 | A | ||
| Power Dissipation | Ptot | 450 | mW | ||
| Operating Temperature Range | Tj | -55 to +125 | C | ||
| Storage Temperature Range | Tstg | -55 to +125 | C | ||
| Marking Code |
|---|
| 1N5817W: SJ |
| 1N5818W: ME |
| 1N5819W: SL |
2410121228_CBI-1N5819W_C2828420.pdf
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