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quality High voltage switching diode with silicon epitaxial planar technology CBI BAS21T in SOT523 package factory
quality High voltage switching diode with silicon epitaxial planar technology CBI BAS21T in SOT523 package factory

High voltage switching diode with silicon epitaxial planar technology CBI BAS21T in SOT523 package

Key Attributes
Model Number: BAS21T
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Recovery Time (trr):
50ns
Voltage - DC Reverse (Vr) (Max):
250V
Operating Junction Temperature Range:
-55℃~+150℃
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21T
Package:
SOT-523
Product Description

Product Overview

This product line consists of High Voltage Switching Diodes designed for various electronic applications. These silicon epitaxial planar diodes offer reliable performance in high-voltage switching scenarios. Available in SOT-523 plastic packages, they are suitable for general-purpose switching applications.

Product Attributes

  • Package Type: SOT-523 Plastic Package
  • Diode Type: Silicon Epitaxial Planar Diodes
  • Brand: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol BAS19T BAS20T BAS21T BAS21AT BAS21CT BAS21ST Unit
Absolute Maximum Ratings (Ta = 25)
Reverse Voltage VR 120 200 250 V
Continuous Forward Current IF(AV) 200 mA
Repetitive Peak Forward Current IFRM 625 mA
Non-repetitive Peak Forward Surge Current (at t = 1 s) IFSM 0.5 A
Non-repetitive Peak Forward Surge Current (at t = 1 s) IFSM 2.5 A
Total Device Dissipation Ptot 150 mW
Thermal Resistance Junction to Ambient RJA 833 /W
Junction and Storage Temperature Range Tj, Tstg - 55 to + 150
Characteristics at Ta = 25
Reverse Breakdown Voltage (at IR = 100 A) V(BR)R 120 200 250 - - - V
Forward Voltage (at IF = 100 mA) VF - V
Forward Voltage (at IF = 200 mA) VF 1.25 V
Reverse Current (at VR = 100 V) IR - - - 0.1 0.1 0.1 A
Reverse Current (at VR = 150 V) IR - - - 100 100 100 A
Reverse Current (at VR = 200 V) IR - - - A
Reverse Current (at VR = 100 V, Tj = 150) IR - - - A
Reverse Current (at VR = 150 V, Tj = 150) IR - - - A
Reverse Current (at VR = 200 V, Tj = 150) IR - - - A
Total Capacitance (at VR = 0, f = 1 MHz) Ctot - 5 pF
Reverse Recovery Time (at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 ) trr - 50 - - - - ns
Marking Code T3 T3 T3 F2 F3 F4

2509181520_CBI-BAS21T_C51814080.pdf

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