Low Forward Voltage Silicon Switching Diode CBI MMBD4148 with High Reverse Breakdown Voltage Ratings

Name: Low Forward Voltage Silicon Switching Diode CBI MMBD4148 with High Reverse Breakdown Voltage Ratings
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMBD4148
Availability: InStock

Key Attributes

Model Number: MMBD4148

Product Custom Attributes

Reverse Leakage Current (Ir):

5uA

Reverse Recovery Time (trr):

4ns

Voltage - DC Reverse (Vr) (Max):

75V

Pd - Power Dissipation:

350mW

Voltage - Forward(Vf@If):

1V@10mA

Current - Rectified:

200mA

Mfr. Part #:

MMBD4148

Package:

SOT-23

Product Description

Product Overview

This product is a Silicon Epitaxial Planar Switching Diode designed for various electronic applications. It offers reliable performance with key electrical characteristics such as low forward voltage, high reverse breakdown voltage, and fast switching speeds. The diode is housed in a compact SOT-23 plastic package, making it suitable for surface-mount technology.

Product Attributes

Material: Silicon Epitaxial Planar
Package Type: SOT-23 Plastic Package
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

General Characteristics:

Parameter	Symbol	Min.	Max.	Unit	Condition
Forward Voltage	VF	-	1	V	IF = 10 mA
Reverse Breakdown Voltage	V(BR)R	100	-	V	IR = 100 A
Reverse Breakdown Voltage	V(BR)R	75	-	V	IR = 5 A
Reverse Current	I	-	25	nA	VR = 20 V, Ta = 150 C
Reverse Current	I	-	5	A	VR = 75 V, Ta = 150 C
Reverse Current	I	-	50	A	VR = 20 V, Ta = 150 C
Reverse Recovery Time	trr	-	4	ns	IF = 10 mA, VR = 6 V, IRR = 1 mA, RL = 100
Total Capacitance	CT	-	4	pF	VR = 0 V, f = 1 MHz

Absolute Maximum Ratings (Ta = 25 C):

Parameter	Symbol	Value	Unit
Maximum Repetitive Reverse Voltage	VRRM	100	V
Reverse Voltage	VR	75	V
Average Rectified Forward Current	IF(AV)	200	mA
DC Forward Current	IFM	600	mA
Recurrent Peak Forward Current	IFRM	700	mA
Non-repetitive Peak Forward Surge Current (t = 1 s)	IFSM	1	A
Non-repetitive Peak Forward Surge Current (t = 1 s)	IFSM	2	A
Total Device Dissipation	Ptot	350	mW
Operating Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-55 to +150	C

Models & Marking Codes:

Model	Marking Code
4148	5H
4148SE	D4
4148CC	D5
4148CA	D6
MMBD4148	5H
MMBD4148SE	D4
MMBD4148CC	D5
MMBD4148CA	D6

Package Outline (SOT-23):

Symbol	Min	Max
A	0.90	1.10
A1	0.013	0.100
B	1.80	2.00
bp	0.35	0.50
C	0.09	0.150
D	2.80	3.00
E	1.20	1.40
HE	2.20	2.80
Lp	0.20	0.50
	0	5

2410121313_CBI-MMBD4148_C21714255.pdf

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