Schottky Barrier Diode CBI RB751V-40 Featuring Low Forward Voltage and Peak Reverse Voltage 40 Volts
Product Overview
The S8 is a silicon epitaxial planar Schottky barrier diode designed for high-speed switching applications. It features a small surface mounting type, low reverse current, and low forward voltage, offering high reliability. This diode is suitable for various industrial applications requiring efficient switching performance.
Product Attributes
- Marking Code: S8
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: Plastic surface mounted package; 2 leads SOD-323
- ESD sensitive product handling required.
Technical Specifications
| Parameter | Symbol | Value | Unit | Typ. | Max. |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 OC) | |||||
| Peak Reverse Voltage | VRM | 40 | V | ||
| Reverse Voltage | VR | 30 | V | ||
| Mean Rectifying Current | IO | 30 | mA | ||
| Peak Forward Surge Current (60 Hz for 1 Cyc.) | IFSM | 200 | mA | ||
| Junction Temperature | Tj | 125 | OC | ||
| Storage Temperature Range | Tstg | - 40 to + 125 | OC | ||
| Characteristics at Ta = 25 OC | |||||
| Forward Voltage at IF = 1 mA | VF | V | - 0.37 | ||
| Reverse Current at VR = 30 V | IR | A | - 0.5 | ||
| Capacitance Between Terminals at VR = 1 V, f = 1 MHz | CT | 2 | pF | ||
| PINNING | |||||
| PIN | DESCRIPTION | ||||
| 1 | Cathode | ||||
| 2 | Anode | ||||
| Simplified outline SOD-323 and symbol | |||||
| PACKAGE OUTLINE | |||||
| Symbol | Dimension in Millimeters | Min | Max | ||
| A | 0.95 | 1.15 | |||
| A1 | 0.010 | 0.100 | |||
| B | 1.20 | 1.40 | |||
| bp | 0.25 | 0.40 | |||
| C | 0.09 | 0.150 | |||
| E | 1.60 | 1.80 | |||
| HE | 2.30 | 2.70 | |||
| Lp | 0.20 | 0.40 | |||
| 0 | 5 | ||||
2410121447_CBI-RB751V-40_C5362075.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.