Surface Mount SOD 323 Diode CBI BAS16WS Silicon Epitaxial Planar for Rapid Switching Applications
Key Attributes
Model Number:
BAS16WS
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
6ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
BAS16WS
Package:
SOD-323
Product Description
Product Overview
This is a Silicon Epitaxial Planar Switching Diode, identified by the marking code "W2". It features fast switching capabilities and is housed in a plastic surface-mounted SOD-323 package with 2 leads. The diode is suitable for applications requiring rapid switching performance.
Product Attributes
- Marking Code: W2
- Material: Silicon Epitaxial Planar
- Package Type: SOD-323
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Forward Voltage | VF | 0.715 | V | at IF = 1 mA |
| Forward Voltage | VF | 0.855 | V | at IF = 10 mA |
| Forward Voltage | VF | 1 | V | at IF = 50 mA |
| Forward Voltage | VF | 1.25 | V | at IF = 150 mA |
| Reverse Leakage Current | I | 1 | A | at VR = 75 V |
| Reverse Leakage Current | I | 30 | A | at VR = 25 V, TJ = 150 OC |
| Reverse Leakage Current | I | 50 | A | at VR = 75 V, TJ = 150 OC |
| Diode Capacitance | Ctot | 2 | pF | at VR = 0 V, f = 1 MHz |
| Reverse Recovery Time | trr | 6 | ns | at IF = 10 mA to IR = 1 mA, RL = 100 |
| Reverse Voltage | VR | 75 | V | (Absolute Maximum Rating) |
| Peak Reverse Voltage | VRM | 100 | V | (Absolute Maximum Rating) |
| Forward Current (Continuous) | IF | 250 | mA | (Absolute Maximum Rating) |
| Non-repetitive Peak Forward Surge Current | IFSM | 0.5 | A | at t = 1 s (Absolute Maximum Rating) |
| Non-repetitive Peak Forward Surge Current | IFSM | 1 | A | at t = 1 ms (Absolute Maximum Rating) |
| Non-repetitive Peak Forward Surge Current | IFSM | 2 | A | at t = 1 s (Absolute Maximum Rating) |
| Power Dissipation | Ptot | 200 | mW | (Absolute Maximum Rating, Ta = 25 OC) |
| Junction Temperature | Tj | 150 | OC | (Absolute Maximum Rating) |
| Storage Temperature Range | Tstg | -65 to +150 | OC | (Absolute Maximum Rating) |
2409272232_CBI-BAS16WS_C2919740.pdf
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