High surge current switching diode CBI 1SS355 in small plastic SOD 323 package for electronic designs
Key Attributes
Model Number:
1SS355
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
100nA@80V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
80V
Operating Junction Temperature Range:
-
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS355
Package:
SOD-323
Product Description
Product Overview
This is a silicon epitaxial planar switching diode designed for high-speed switching applications. It features a small plastic package suitable for surface-mounted designs and offers high reliability with excellent surge current handling capability. Its compact form factor and robust performance make it ideal for various electronic circuits requiring efficient switching.
Product Attributes
- Package Type: SOD-323
- Material: Plastic
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Value | Unit | Description |
|---|---|---|---|---|
| Peak Reverse Voltage | VRM | 90 | V | |
| Reverse Voltage | VR | 80 | V | |
| Average Rectified Forward Current | IF(AV) | 100 | mA | |
| Peak Forward Current | IFM | 225 | mA | |
| Surge Forward Current (1 s) | IFSM | 500 | mA | |
| Junction Temperature | Tj | 150 | OC | |
| Storage Temperature Range | Tstg | -55 to +150 | OC | |
| Forward Voltage at IF = 100 mA | VF | 1.2 | V | Max. |
| Reverse Current at VR = 80 V | IR | 0.1 | A | Max. |
| Capacitance between Terminals at VR = 0.5 V, f = 1 MHz | CT | 3 | pF | Max. |
| Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 | trr | 4 | ns | Max. |
Package Outline
Plastic surface mounted package; 2 leads SOD-323
Pinning
| PIN | DESCRIPTION |
|---|---|
| 1 | Cathode |
| 2 | Anode |
Top View
Marking Code: " "
2410121536_CBI-1SS355_C2919742.pdf
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