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quality Medium Current Zener Diode SOD323 Plastic Encapsulated CBI BZT52C3V9S Suitable for Automated Assembly factory
quality Medium Current Zener Diode SOD323 Plastic Encapsulated CBI BZT52C3V9S Suitable for Automated Assembly factory

Medium Current Zener Diode SOD323 Plastic Encapsulated CBI BZT52C3V9S Suitable for Automated Assembly

Key Attributes
Model Number: BZT52C3V9S
Product Custom Attributes
Impedance(Zzt):
90Ω
Diode Configuration:
Independent
Zener Voltage(Range):
3.7V~4.1V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
3.9V
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52C3V9S
Package:
SOD-323
Product Description

Product Overview

The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general-purpose, medium current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version.

Product Attributes

  • Packaging: SOD-323 Plastic-Encapsulate
  • Construction: Planar die
  • Availability: Lead-free version available

Technical Specifications

Model Marking Nominal Zener Voltage (V) Zener Voltage Min (V) Zener Voltage Max (V) Test Current (mA) Max Zener Impedance () @ IZT Max Reverse Current (A) @ VR Forward Voltage (V) @ IF = 10mA Power Dissipation (mW) Thermal Resistance (/W) Junction Temperature () Storage Temperature Range ()
BZT52C2V4S WX 2.4 2.20 2.60 5 100 @ 5mA 1.0 @ 0V 0.9 200 625 150 -55~+150
BZT52C2V7S W1 2.7 2.5 2.9 5 100 @ 5mA 1.0 @ 0V 0.9 200 625 150 -55~+150
BZT52C3V0S W2 3.0 2.8 3.2 5 95 @ 5mA 1.0 @ 0V 0.9 200 625 150 -55~+150
BZT52C3V3S W3 3.3 3.1 3.5 5 95 @ 5mA 1.0 @ 0V 0.9 200 625 150 -55~+150
BZT52C3V6S W4 3.6 3.4 3.8 5 90 @ 5mA 1.0 @ 0V 0.9 200 625 150 -55~+150
BZT52C3V9S W5 3.9 3.7 4.1 5 90 @ 5mA 1.0 @ 0V 0.9 200 625 150 -55~+150
BZT52C4V3S W6 4.3 4.0 4.6 5 90 @ 5mA 1.0 @ 0V 0.9 200 625 150 -55~+150
BZT52C4V7S W7 4.7 4.4 5.0 5 80 @ 5mA 2.0 @ 0.2V 0.9 200 625 150 -55~+150
BZT52C5V1S W8 5.1 4.8 5.4 5 60 @ 5mA 2.0 @ 1.2V 0.9 200 625 150 -55~+150
BZT52C5V6S W9 5.6 5.2 6.0 5 40 @ 5mA 2.0 @ 2.5V 0.9 200 625 150 -55~+150
BZT52C6V2S WA 6.2 5.8 6.6 5 10 @ 5mA 4.0 @ 3.7V 0.9 200 625 150 -55~+150
BZT52C6V8S WB 6.8 6.4 7.2 5 15 @ 5mA 4.0 @ 4.5V 0.9 200 625 150 -55~+150
BZT52C7V5S WC 7.5 7.0 7.9 5 15 @ 5mA 5.0 @ 5.3V 0.9 200 625 150 -55~+150
BZT52C8V2S WD 8.2 7.7 8.7 5 15 @ 5mA 5.0 @ 6.2V 0.9 200 625 150 -55~+150
BZT52C9V1S WE 9.1 8.5 9.6 5 15 @ 5mA 6.0 @ 7.0V 0.9 200 625 150 -55~+150
BZT52C10S WF 10 9.4 10.6 5 20 @ 5mA 7.0 @ 8.0V 0.9 200 625 150 -55~+150
BZT52C11S WG 11 10.4 11.6 5 20 @ 5mA 8.0 @ 9.0V 0.9 200 625 150 -55~+150
BZT52C12S WH 12 11.4 12.7 5 25 @ 5mA 8.0 @ 10.0V 0.9 200 625 150 -55~+150
BZT52C13S WI 13 12.4 14.1 5 30 @ 5mA 8.0 @ 11.0V 0.9 200 625 150 -55~+150
BZT52C15S WJ 15 13.8 15.6 5 30 @ 5mA 10.5 @ 13.0V 0.9 200 625 150 -55~+150
BZT52C16S WK 16 15.3 17.1 5 40 @ 5mA 11.2 @ 14.0V 0.9 200 625 150 -55~+150
BZT52C18S WL 18 16.8 19.1 5 45 @ 5mA 12.6 @ 16.0V 0.9 200 625 150 -55~+150
BZT52C20S WM 20 18.8 21.2 5 55 @ 5mA 14.0 @ 18.0V 0.9 200 625 150 -55~+150
BZT52C22S WN 22 20.8 23.3 5 55 @ 5mA 15.4 @ 20.0V 0.9 200 625 150 -55~+150
BZT52C24S WO 24 22.8 25.6 5 70 @ 5mA 16.8 @ 22.0V 0.9 200 625 150 -55~+150
BZT52C27S WP 27 25.1 28.9 2 80 @ 2mA 18.9 @ 25.3V 0.9 200 625 150 -55~+150
BZT52C30S WQ 30 28.0 32.0 2 80 @ 2mA 21.0 @ 29.4V 0.9 200 625 150 -55~+150
BZT52C33S WR 33 31.0 35.0 2 80 @ 2mA 23.1 @ 33.4V 0.9 200 625 150 -55~+150
BZT52C36S WS 36 34.0 38.0 2 90 @ 2mA 25.2 @ 37.4V 0.9 200 625 150 -55~+150
BZT52C39S WT 39 37.0 41.0 2 130 @ 2mA 27.3 @ 41.2V 0.9 200 625 150 -55~+150

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

2410121326_CBI-BZT52C3V9S_C2886314.pdf

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