Silicon Planar Zener Diode CBI BZX84C5V6 for High Density Printed Circuit Boards and Portable Devices
Key Attributes
Model Number:
BZX84C5V6
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
40Ω
Diode Configuration:
Independent
Zener Voltage(Range):
5.2V~6V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
5.6V
Mfr. Part #:
BZX84C5V6
Package:
SOT-23
Product Description
Product Overview
The BZX84CSeries Silicon Planar Zener Diodes are designed for efficient voltage regulation in a compact, surface-mount SOT-23 plastic package. These diodes are ideal for applications requiring minimal space, such as cellular phones, handheld portables, and high-density printed circuit boards. They offer a wide Zener breakdown voltage range from 2.0 V to 75 V and are engineered for optimal automated board assembly.
Product Attributes
- Package Type: SOT-23 Plastic Package
- Semiconductor Type: Silicon Planar Zener Diodes
Technical Specifications
| Model | Type Marking Code | Nominal Zener Voltage (V) | Minimum Zener Voltage (V) | Maximum Zener Voltage (V) | Test Current (IZT) (mA) | Maximum Dynamic Impedance (ZZT) () | Reverse Current (IR) (A) | Reverse Voltage (VR) (V) |
|---|---|---|---|---|---|---|---|---|
| BZX84C2V0 | A8 | 2.0 | 1.8 | 2.15 | 5 | 100 | 120 | 0.5 |
| BZX84C2V2 | B8 | 2.2 | 2.08 | 2.33 | 5 | 100 | 120 | 0.7 |
| BZX84C2V4 | C8 | 2.4 | 2.2 | 2.6 | 5 | 100 | 50 | 1 |
| BZX84C2V7 | D8 | 2.7 | 2.5 | 2.9 | 5 | 100 | 20 | 1 |
| BZX84C3V0 | E8 | 3.0 | 2.8 | 3.2 | 5 | 95 | 10 | 1 |
| BZX84C3V3 | F8 | 3.3 | 3.1 | 3.5 | 5 | 95 | 5 | 1 |
| BZX84C3V6 | H8 | 3.6 | 3.4 | 3.8 | 5 | 90 | 5 | 1 |
| BZX84C3V9 | J8 | 3.9 | 3.7 | 4.1 | 5 | 90 | 3 | 1 |
| BZX84C4V3 | K8 | 4.3 | 4.0 | 4.6 | 5 | 90 | 3 | 1 |
| BZX84C4V7 | M8 | 4.7 | 4.4 | 5.0 | 5 | 80 | 3 | 2 |
| BZX84C5V1 | N8 | 5.1 | 4.8 | 5.4 | 5 | 60 | 2 | 2 |
| BZX84C5V6 | P8 | 5.6 | 5.2 | 6.0 | 5 | 40 | 1 | 2 |
| BZX84C6V2 | R8 | 6.2 | 5.8 | 6.6 | 5 | 10 | 3 | 4 |
| BZX84C6V8 | X8 | 6.8 | 6.4 | 7.2 | 5 | 15 | 2 | 4 |
| BZX84C7V5 | Y8 | 7.5 | 7.0 | 7.9 | 5 | 15 | 1 | 5 |
| BZX84C8V2 | Z8 | 8.2 | 7.7 | 8.7 | 5 | 15 | 0.7 | 5 |
| BZX84C9V1 | A9 | 9.1 | 8.5 | 9.6 | 5 | 15 | 0.5 | 6 |
| BZX84C10 | B9 | 10.0 | 9.4 | 10.6 | 5 | 20 | 0.2 | 7 |
| BZX84C11 | C9 | 11.0 | 10.4 | 11.6 | 5 | 20 | 0.1 | 8 |
| BZX84C12 | D9 | 12.0 | 11.4 | 12.7 | 5 | 25 | 0.1 | 8 |
| BZX84C13 | E9 | 13.0 | 12.4 | 14.1 | 5 | 30 | 0.1 | 8 |
| BZX84C15 | F9 | 15.0 | 13.8 | 15.6 | 5 | 30 | 0.05 | 10.5 |
| BZX84C16 | H9 | 16.0 | 15.3 | 17.1 | 5 | 40 | 0.05 | 11.2 |
| BZX84C18 | J9 | 18.0 | 16.8 | 19.1 | 5 | 45 | 0.05 | 12.6 |
| BZX84C20 | K9 | 20.0 | 18.8 | 21.2 | 5 | 55 | 0.05 | 14.0 |
| BZX84C22 | M9 | 22.0 | 20.8 | 23.3 | 5 | 55 | 0.05 | 15.4 |
| BZX84C24 | N9 | 24.0 | 22.8 | 25.6 | 5 | 70 | 0.05 | 16.8 |
| BZX84C27 | P9 | 27.0 | 25.1 | 28.9 | 2 | 80 | 0.05 | 18.9 |
| BZX84C30 | R9 | 30.0 | 28.0 | 32.0 | 2 | 80 | 0.05 | 21.0 |
| BZX84C33 | X9 | 33.0 | 31.0 | 35.0 | 2 | 80 | 0.05 | 23.1 |
| BZX84C36 | Y9 | 36.0 | 34.0 | 38.0 | 2 | 90 | 0.05 | 25.2 |
| BZX84C39 | Z9 | 39.0 | 37.0 | 41.0 | 2 | 130 | 0.05 | 27.3 |
| BZX84C43 | A0 | 43.0 | 40.0 | 46.0 | 2 | 150 | 0.05 | 30.1 |
| BZX84C47 | B0 | 47.0 | 44.0 | 50.0 | 2 | 170 | 0.05 | 32.9 |
| BZX84C51 | C0 | 51.0 | 48.0 | 54.0 | 2 | 180 | 0.05 | 35.7 |
| BZX84C56 | D0 | 56.0 | 52.0 | 60.0 | 2 | 200 | 0.05 | 39.2 |
| BZX84C62 | E0 | 62.0 | 58.0 | 66.0 | 2 | 215 | 0.05 | 43.4 |
| BZX84C68 | F0 | 68.0 | 64.0 | 72.0 | 2 | 240 | 0.05 | 47.6 |
| BZX84C75 | H0 | 75.0 | 70.0 | 79.0 | 2 | 255 | 0.05 | 52.5 |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation | PD | 350 | mW |
| Thermal Resistance, Junction to Ambient | RJA | 417 | C/W |
| Junction and Storage Temperature Range | Tj, Tstg | -65 to +150 | C |
| Forward Voltage (VF) at IF = 10 mA | VF | < 0.9 | V |
Note: 1) Tested with pulses tp = 20 ms. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
2410121234_CBI-BZX84C5V6_C2832548.pdf
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