Plastic Encapsulated Zener Diode CBI BZT52C2V4S with 200mW Power Dissipation and Ceramic PCB Mounting
Key Attributes
Model Number:
BZT52C2V4S
Product Custom Attributes
Impedance(Zzt):
100Ω
Diode Configuration:
Independent
Zener Voltage(Range):
2.2V~2.6V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
2.4V
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52C2V4S
Package:
SOD-323
Product Description
Product Overview
The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general-purpose, medium-current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version.
Product Attributes
- Package Type: SOD-323
- Construction: Planar die
- Power Dissipation: 200mW on ceramic PCB
- Availability: Lead-free version
Technical Specifications
| Model | Marking | Nominal Zener Voltage (V) | Min Zener Voltage (V) | Max Zener Voltage (V) | Test Current (mA) | Max Zener Impedance () @ IZT | Max Reverse Current (A) @ VR | Forward Voltage (V) @ IF=10mA | Power Dissipation (mW) | Thermal Resistance (/W) RJA | Junction Temperature () Tj | Storage Temperature Range () Tstg |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BZT52C2V4S | WX | 2.4 | 2.20 | 2.60 | 5 | 100 | 1.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C2V7S | W1 | 2.7 | 2.5 | 2.9 | 5 | 100 | 1.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C3V0S | W2 | 3.0 | 2.8 | 3.2 | 5 | 95 | 1.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C3V3S | W3 | 3.3 | 3.1 | 3.5 | 5 | 95 | 1.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C3V6S | W4 | 3.6 | 3.4 | 3.8 | 5 | 90 | 1.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C3V9S | W5 | 3.9 | 3.7 | 4.1 | 5 | 90 | 1.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C4V3S | W6 | 4.3 | 4.0 | 4.6 | 5 | 90 | 1.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C4V7S | W7 | 4.7 | 4.4 | 5.0 | 5 | 80 | 2.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C5V1S | W8 | 5.1 | 4.8 | 5.4 | 5 | 60 | 2.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C5V6S | W9 | 5.6 | 5.2 | 6.0 | 5 | 40 | 2.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C6V2S | WA | 6.2 | 5.8 | 6.6 | 5 | 10 | 3.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C6V8S | WB | 6.8 | 6.4 | 7.2 | 5 | 15 | 4.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C7V5S | WC | 7.5 | 7.0 | 7.9 | 5 | 15 | 5.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C8V2S | WD | 8.2 | 7.7 | 8.7 | 5 | 15 | 5.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C9V1S | WE | 9.1 | 8.5 | 9.6 | 5 | 15 | 6.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C10S | WF | 10 | 9.4 | 10.6 | 5 | 20 | 7.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C11S | WG | 11 | 10.4 | 11.6 | 5 | 20 | 8.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C12S | WH | 12 | 11.4 | 12.7 | 5 | 25 | 8.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C13S | WI | 13 | 12.4 | 14.1 | 5 | 30 | 8.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C15S | WJ | 15 | 13.8 | 15.6 | 5 | 30 | 10.5 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C16S | WK | 16 | 15.3 | 17.1 | 5 | 40 | 11.2 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C18S | WL | 18 | 16.8 | 19.1 | 5 | 45 | 12.6 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C20S | WM | 20 | 18.8 | 21.2 | 5 | 55 | 14.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C22S | WN | 22 | 20.8 | 23.3 | 5 | 55 | 15.4 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C24S | WO | 24 | 22.8 | 25.6 | 5 | 70 | 16.8 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C27S | WP | 27 | 25.1 | 28.9 | 2 | 80 | 18.9 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C30S | WQ | 30 | 28.0 | 32.0 | 2 | 80 | 21.0 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C33S | WR | 33 | 31.0 | 35.0 | 2 | 80 | 23.1 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C36S | WS | 36 | 34.0 | 38.0 | 2 | 90 | 25.2 | 0.9 | 200 | 625 | 150 | -55~+150 |
| BZT52C39S | WT | 39 | 37.0 | 41.0 | 2 | 130 | 27.3 | 0.9 | 200 | 625 | 150 | -55~+150 |
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2410121326_CBI-BZT52C2V4S_C2886309.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
