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quality SOD323 Plastic Encapsulated Planar Die Zener Diode CBI BZT52C16S Medium Current 200mW Power Dissipation factory
quality SOD323 Plastic Encapsulated Planar Die Zener Diode CBI BZT52C16S Medium Current 200mW Power Dissipation factory

SOD323 Plastic Encapsulated Planar Die Zener Diode CBI BZT52C16S Medium Current 200mW Power Dissipation

Key Attributes
Model Number: BZT52C16S
Product Custom Attributes
Impedance(Zzt):
40Ω
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
15.3V~17.1V
Zener Voltage(Nom):
16V
Impedance(Zzk):
200Ω
Mfr. Part #:
BZT52C16S
Package:
SOD-323
Product Description

Product Overview

The SOD-323 series Zener Diodes are designed for general-purpose applications requiring medium current and feature a planar die construction. These diodes offer 200mW power dissipation on a ceramic PCB and are ideally suited for automated assembly processes. They are available in a lead-free version.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOD-323
  • Material: Plastic Encapsulated
  • Construction: Planar die
  • Lead Finish: Lead Free version available

Technical Specifications

Model Marking Nominal Zener Voltage (V) @ IZT (mA) Max Zener Impedance () @ IZK (mA) Max Reverse Current (A) @ VR (V) Typical Temperature Coefficient (mV/C) @ IZTC (mA) Forward Voltage (V) @ IF = 10mA Power Dissipation (mW) Junction Temperature (C) Storage Temperature Range (C) Thermal Resistance (C/W)
BZT52C2V4S WX 2.4 @ 5mA 100 @ 1.0mA 50 @ 1.0V -3.5 @ 0mA 0.9 200 150 -55~+150 625
BZT52C2V7S W1 2.7 @ 5mA 100 @ 1.0mA 20 @ 1.0V -3.5 @ 0mA 0.9 200 150 -55~+150 625
BZT52C3V0S W2 3.0 @ 5mA 95 @ 1.0mA 10 @ 1.0V -3.5 @ 0mA 0.9 200 150 -55~+150 625
BZT52C3V3S W3 3.3 @ 5mA 95 @ 1.0mA 5 @ 1.0V -3.5 @ 0mA 0.9 200 150 -55~+150 625
BZT52C3V6S W4 3.6 @ 5mA 90 @ 1.0mA 5 @ 1.0V -3.5 @ 0mA 0.9 200 150 -55~+150 625
BZT52C3V9S W5 3.9 @ 5mA 90 @ 1.0mA 3 @ 1.0V -3.5 @ 0mA 0.9 200 150 -55~+150 625
BZT52C4V3S W6 4.3 @ 5mA 90 @ 1.0mA 3 @ 1.0V -3.5 @ 0mA 0.9 200 150 -55~+150 625
BZT52C4V7S W7 4.7 @ 5mA 80 @ 1.0mA 3 @ 2.0V -3.5 @ 0.2mA 0.9 200 150 -55~+150 625
BZT52C5V1S W8 5.1 @ 5mA 60 @ 1.0mA 2 @ 2.0V -2.7 @ 1.2mA 0.9 200 150 -55~+150 625
BZT52C5V6S W9 5.6 @ 5mA 40 @ 1.0mA 1 @ 2.0V -2 @ 2.5mA 0.9 200 150 -55~+150 625
BZT52C6V2S WA 6.2 @ 5mA 10 @ 3mA 3 @ 4.0V 0.4 @ 3.7mA 0.9 200 150 -55~+150 625
BZT52C6V8S WB 6.8 @ 5mA 15 @ 2mA 2 @ 4.0V 1.2 @ 4.5mA 0.9 200 150 -55~+150 625
BZT52C7V5S WC 7.5 @ 5mA 15 @ 1mA 1 @ 5.0V 2.5 @ 5.3mA 0.9 200 150 -55~+150 625
BZT52C8V2S WD 8.2 @ 5mA 15 @ 0.7mA 0.7 @ 5.0V 3.2 @ 6.2mA 0.9 200 150 -55~+150 625
BZT52C9V1S WE 9.1 @ 5mA 15 @ 0.5mA 0.5 @ 6.0V 3.8 @ 7.0mA 0.9 200 150 -55~+150 625
BZT52C10S WF 10 @ 5mA 20 @ 0.2mA 0.2 @ 7.0V 4.5 @ 8.0mA 0.9 200 150 -55~+150 625
BZT52C11S WG 11 @ 5mA 20 @ 0.1mA 0.1 @ 8.0V 5.4 @ 9.0mA 0.9 200 150 -55~+150 625
BZT52C12S WH 12 @ 5mA 25 @ 0.1mA 0.1 @ 8.0V 6.0 @ 10.0mA 0.9 200 150 -55~+150 625
BZT52C13S WI 13 @ 5mA 30 @ 0.1mA 0.1 @ 8.0V 7.0 @ 11.0mA 0.9 200 150 -55~+150 625
BZT52C15S WJ 15 @ 5mA 30 @ 0.1mA 0.1 @ 10.5V 9.2 @ 13mA 0.9 200 150 -55~+150 625
BZT52C16S WK 16 @ 5mA 40 @ 0.1mA 0.1 @ 11.2V 10.4 @ 14mA 0.9 200 150 -55~+150 625
BZT52C18S WL 18 @ 5mA 45 @ 0.1mA 0.1 @ 12.6V 12.4 @ 16mA 0.9 200 150 -55~+150 625
BZT52C20S WM 20 @ 5mA 55 @ 0.1mA 0.1 @ 14.0V 14.4 @ 18.0mA 0.9 200 150 -55~+150 625
BZT52C22S WN 22 @ 5mA 55 @ 0.1mA 0.1 @ 15.4V 16.4 @ 20.0mA 0.9 200 150 -55~+150 625
BZT52C24S WO 24 @ 5mA 70 @ 0.1mA 0.1 @ 16.8V 18.4 @ 22.0mA 0.9 200 150 -55~+150 625
BZT52C27S WP 27 @ 2mA 80 @ 0.5mA 0.5 @ 18.9V 21.4 @ 25.3mA 0.9 200 150 -55~+150 625
BZT52C30S WQ 30 @ 2mA 80 @ 0.5mA 0.5 @ 21.0V 24.4 @ 29.4mA 0.9 200 150 -55~+150 625
BZT52C33S WR 33 @ 2mA 80 @ 0.5mA 0.5 @ 23.1V 27.4 @ 33.4mA 0.9 200 150 -55~+150 625
BZT52C36S WS 36 @ 2mA 90 @ 0.5mA 0.5 @ 25.2V 30.4 @ 37.4mA 0.9 200 150 -55~+150 625
BZT52C39S WT 39 @ 2mA 130 @ 0.5mA 0.5 @ 27.3V 33.4 @ 41.2mA 0.9 200 150 -55~+150 625

Dimensions (SOD-323)

Symbol Dimension in Millimeters (Min) Dimension in Millimeters (Max)
A 0.95 1.15
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.40
C 0.09 0.150
E 1.60 1.80
HE 2.30 2.70
Lp 0.20 0.40
0 5

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

2410121521_CBI-BZT52C16S_C21714175.pdf

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