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quality semiconductor ChipNobo BAT54S215CN diode with fast switching and 200 milliamp forward current in SOT23 factory
quality semiconductor ChipNobo BAT54S215CN diode with fast switching and 200 milliamp forward current in SOT23 factory

semiconductor ChipNobo BAT54S215CN diode with fast switching and 200 milliamp forward current in SOT23

Key Attributes
Model Number: BAT54S,215-CN
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54S,215-CN
Package:
SOT-23
Product Description

Product Overview

This product is a semiconductor component designed for high-current applications, featuring low forward voltage drop and extremely fast switching speeds. It is housed in a compact SOT-23 package, suitable for general electronic equipment. The component is rated for a maximum repetitive peak reverse voltage of 30V and a maximum average forward rectified current of 200mA.

Product Attributes

  • Brand: ChipNobo
  • Package Type: SOT-23 Small Outline Plastic Package
  • Epoxy Flammability Rating: UL 94V-0
  • Mounting Position: Any
  • Intended Use: Residential and commercial equipment; not for sensitive items or specialized equipment in sanctioned areas.

Technical Specifications

Parameters Symbol Limit/Conditions Unit
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Maximum repetitive peak reverse voltage VRRM 30 V
Maximum RMS voltage VRMS 21 V
Maximum DC blocking voltage VDC 30 V
Maximum average forward rectified current IFM 200 mA
Peak forward surge current (1.0s single half sine-wave) IFSM 600 mA
Typical thermal resistance RJA 500 /W
Power Dissipation PD 200 mW
Junction Temperature Tj 150
Storage temperature range TSTG -50 to +150
Electrical Characteristics (TA = 25 unless otherwise specified)
Maximum forward voltage VF IF = 0.1mA 240 mV
IF = 1.0mA 320 mV
IF = 10mA 400 mV
IF = 30mA 500 mV
IF = 100mA 1000 mV
Maximum reverse breakdown voltage VR IR=100uA 30 V
Maximum reverse current IR VR=25V 2.0 uA
Typical junction capacitance Cj VR = 1.0V, f = 1MHz 10 pF
Reverse Recovery time trr IF=IR=10mA, Irr=0.1XIRRL=100 5 ns

For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.


2507091655_ChipNobo-BAT54S-215-CN_C42419957.pdf

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