Silicon Controlled Rectifier Central 2N3670 PBFREE Featuring Hermetic Sealing and High Voltage Ratings

Key Attributes
Model Number: 2N3670 PBFREE
Product Custom Attributes
Mfr. Part #:
2N3670 PBFREE
Product Description

Product Overview

The CENTRAL SEMICONDUCTOR 2N3669 and 2N3670 are hermetically sealed Silicon Controlled Rectifiers (SCRs) designed for sensing circuit applications and control systems. These devices offer robust performance with ratings up to 16 Amps and voltages of 400 to 600 Volts. Higher voltage devices and specific electrical selections are available upon special order.

Product Attributes

  • Brand: CENTRAL SEMICONDUCTOR
  • Case Style: TO-3 50 MIL CASE
  • Material: SILICON
  • Packaging: Hermetically sealed
  • Marking: FULL PART NUMBER

Technical Specifications

Symbol 2N3669 2N3670 Units Description
VRRM 200 400 V Peak Repetitive Off-State Voltage
VDRM 400 600 V Peak Repetitive Off-State Voltage
IT(RMS) 16 A RMS On-State Current (TC=90C)
ITSM 200 A Peak One Cycle Surge Current (60Hz, TC=80C)
IGM 4.0 A Peak Gate Current
PG(AV) 0.5 W Average Gate Power Dissipation
TJ, Tstg -40 to +125 C Operating and Storage Junction Temperature
JC 1.7 C/W Thermal Resistance
IRRM 1.0 mA (VR=Rated VRRM, TC=100C)
IDRM 2.0 mA (VD=Rated VDRM, TC=100C)
IGT 1.0 40 mA (VD=7.0V)
IH 0.5 50 mA (RG=1.0K)
VTM 1.8 V (IT=25A)
VGT 2.0 V (VD=7.0V)
dv/dt 10 to 400 V/s (VD=VDRM, RG=1.0k, TC=100C)
tgd 500 ns (IG=125mA, diG/dt=1.25A/s)
tq 50 s (VD=VDRM, VR=35V, IT=10A, TC=90C)

Lead Code: 1) Gate, 2) Cathode, Case) Anode

Note: The 2N3669 and 2N3670 Silicon Controlled Rectifiers are discontinued and classified as End of Life (EOL). Last purchase orders are accepted six (6) months from the notice date, with final shipments twelve (12) months from the notice date. Minimum order quantities may apply. Replacement products are not specified.


2507011055_Central-2N3670-PBFREE_C6404314.pdf

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